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Valier Poydenot

Long distance ordered dots and wires on Si(001) by flexion dislocation networks

Published on 14 December 2005


Thesis presented December 14, 2005

Abstract:
The growth of ordered semiconductor nanostructures, with a controlled size and position, is an major technologic challenge. In this study, we propose an original method to grow by molecular beam epitaxy ordered germanium nanostructures on silicon (001). A periodic array of tilt dislocations is obtained by molecular bounding, and induces a periodic strain field at the surface of the substrate. The observed organization of germanium nanostructures is due to the strain field generated on the silicon surface by an interfacial tilt dislocation array.

Keywords:
Molecular bonding, molecular beam epitaxy, silicon, germanium, nanostructure, transmission electron microscopy, strain field

On-line thesis.