You are here : Home > The Sinaps team > News > Self-organization of nano-structures by buried dislocation networks

Fabien Leroy

Self-organization of nano-structures by buried dislocation networks

Published on 29 October 2003
Thesis presented October 29, 2003

Abstract:
Use of nano-structures use is nowadays investigated as an alternative to conventional microelectronics devices. But physical properties of these nano-structures strongly depend on the size and density control. This works deals with the possibility of periodical elastic fields induced organization of nanostructures. The elastic fields are induced by buried dislocation networks, created with Si/Si molecular bonding. We show that the nano-structures organization by molecular beam epitaxy is not possible. But using a strain selective etching, we managed to define a nano-patterned surface, in a well controlled way. This new kind of surface has been used as a template for germanium nano-structure growth, which demonstrated its efficiency.

Keywords:
Silicon, germanium, stress, elasticity calculations, organization, dislocation networks, surface patterning, GIXRD, GISAXS, STM

On-line thesis