Thesis presented September 24, 2020
Abstract: III-nitride semiconductors (AlN, GaN, InN and their alloys) have become an integral part of our daily lives as they are used in white, blue, green, and ultraviolet light emitting diodes, as well as laser diodes and power and high frequency electronics. This material is highly versatile due to its tuneable large direct band gap from the ultraviolet to the visible. III-nitrides give access to a very wide range of electronic, optoelectronic, and photonic applications. In photonics, a promising field relies on the III-nitride on silicon platform for next generation photonic integrated circuits due to its large transparency window from the ultraviolet to the near-infrared and the possibility of monolithic integration of active emitters such as quantum wells and quantum dots. In this thesis, we study different photonic devices and their integration into active and passive photonic circuits at wavelengths going from the ultraviolet to the near-infrared. We demonstrate low threshold pulsed optically pumped lasing and the first active microlaser photonic circuits in the blue and ultraviolet spectral ranges. We also propose a scheme for electrical injection in microrings that is compatible with photonic circuits and investigate III-nitrides bonded on SiO
2 as a platform for passive photonic circuits in the near- infrared.
Keywords: microlaser, microcavity, integrated photonics, photonic circuits, III-nitrides
On-line thesis.