You are here : Home > The Lateqs team > Radiofrequency readout of hole spins confined in semiconductor quantum dots

Estelle Vincent

Radiofrequency readout of hole spins confined in semiconductor quantum dots

Published on 8 November 2023
Thesis presented November 08, 2023

Holes in the valence band of group-IV semiconductors benefits from natural spin-orbit interaction. Consequently, holes spins can be manipulated with the electric field offering perspectives for quantum information processing. Among the different semiconducting materials, Silicon and Germanium stand out for the fabrication of quantum dot devices. On one hand, isotopically purified Silicon offers a clean magnetic environment together with very mature fabrication process. On the other hand, Germanium shows high mobilities and low effective masses in Ge/SiGe quantum well heterostructures, offering a large freedom in device design. In this manuscript, we explore the spin physics of holes confined in semiconductor quantum dots focusing on readout techniques allowing for spin state detection. We first explore the dispersive readout of holes in Silicon-on-insulator nanowires. For these purpose, we design and fabricate Nobium nitride superconducting microwave resonator, and implement a gate-reflectometry setup working at a few gigahertz to probe their frequency response. Second, we focus on the charge sensing of double quantum dots (DQDs) in Ge/SiGe heterostructure. We implement a radiofrequency setup on the charge sensor made of a single quantum dot allowing for the differentiation of charge states of the DQD in less than a microsecond. Associated with a measured charge noise around 0.2 microEv/sqrt(Hz), this setup allows to reach the last hole regime of the DQD. Eventually we demonstrate the detection of Pauli Spin Blockade. Using this spin-to-charge conversion mechanism, we access the spin states of the DQD and report on their energy relaxation rates.

Radiofrequency, holes, spins, silicon, germanium, quantum dots

On-line thesis.