2023
Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography Lou Denaix, Florian Castioni, Matthew Bryan, David Cooper, and Eva Monroy
ACS Applied Materials & Interfaces 15, 11208 (2023)
The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures Ioanna Dimkou, Jonathan Houard, Névine Rochat, Pradip Dalapati, Enrico Di Russo, David Cooper, Adeline Grenier, Eva Monroy, and Lorenzo Rigutti
Microscopy and Microanalysis 29, 451 (2023)
Design and fabrication process flow for high-efficiency and flexible InGaN solar cells Rajat Gujrati, Soufiane Karrakchou, Lucas Oliverio, Suresh Sundaram, Paul L Voss, Eva Monroy, Jean Paul Salvestrini, and Abdallah Ougazzaden
Micro and Nanostructures 176, 207538 (2023)
Polarization Doping in a GaN-InN System—Ab Initio Simulation Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R Zytkiewicz, Grzegorz Muziol, Eva Monroy, Agata Kaminska, and Stanislaw Krukowski
Materials 16, 1227 (2023)
2022
Assessment of Active Dopants and p–n Junction Abruptness Using
In Situ Biased 4D-STEM Bruno César da Silva, Zahra Sadre Momtaz, Eva Monroy, Hanako Okuno, Jean-Luc Rouviere, David Cooper, and Martien Ilse Den Hertog
Nano Letters 22, 9544 (2022)
Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope Aidan Conlan, Minh Anh Luong, Pascal Gentile, Grigore Moldovan, Martien den Hertog, Eva Monroy, David Cooper
Nanotechnology 33 (3), 035712 (2022)
Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets S. Cuesta, L. Denaix, F. Castioni, Le Si Dang, and E. Monroy
Semiconductor Science and Technology 37, 075013 (2022)
Electron beam pumped light emitting devices S. Cuesta, A. Harikumar, and E. Monroy
Journal of Physics D: Applied Physics 55, 273003 (2022)
Optical net gain measurement on Al0.07Ga0.93N/GaN multi-quantum wells Q.-M. Thai, S. Cuesta, L. Denaix, S. Hermelin, O. Boisron, E. Bellet-Amalric, C. Bougerol, F. Castioni, S. T. Purcell, Le Si Dang, and E. Monroy
Optics Express 30, 25219 (2022)
Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures P. Strak, K. Koronski, K. Sakowski, K. Sobczak, J. Borysiuk, K. P. Korona, P. A. Dró?d?, E. Grzanka, M. Sarzynski, A. Suchocki, E. Monroy, S. Krukowski, and A. Kaminska
Journal of Alloys and Compounds 823, 153791 (2022)
Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality A. Ahmad, P. Strak, P. Kempisty, K. Sakowski, J. Piechota, Y. Kangawa, I. Grzegory, M. Leszczynski, Z. R. Zytkiewicz, G. Muziol, E. Monroy, A. Kaminska, and S. Krukowski
Journal of Applied Physics 132, 064301 (2022)
Combining Atomic-Scale EDX with Inelastic Multislice Simulations for Quantitative Chemical Analysis of AlGaN/GaN 1 nm-thick Quantum Wells F. Castioni, S. Cuesta, N. Bernier, P. Quéméré, E. Robin, V. Delaye, E. Monroy, and P. Bayle-Guillemaud
Microscopy and Microanalysis 28, 2564 (2022)
The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature-and Pressure-Dependent Study of Polar and Non-Polar Structures K. Koronski, K. P. Korona, S. Kryvyi, A. Wierzbicka, K. Sobczak, S. Krukowski, P. Strak, E. Monroy, and A. Kaminska
Materials 15, 2756 (2022)
Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering Michael Sun, Rodrigo Blasco, Julian Nwodo, María de la Mata, Sergio I Molina, Akhil Ajay, Eva Monroy, Sirona Valdueza-Felip, and Fernando B
Naranjo Materials 15, 7373 (2022)
2021
Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission Sergi Cuesta, Lou Denaix, Le Si Dang, Eva Monroy
Applied Physics Letters 119 (15), 151103 (2021)
Non-polar GaN/AlGaN quantum-well polariton laser at room temperature E.A. Amargianitakis, K. Tsagaraki, A. Kostopoulos, G. Konstantinidis, E. Delamadeleine, E. Monroy, N.T. Pelekanos
Physical Review B 104 (12), 125311 (2021)
Performance enhancement of an ultrafast all-fiber laser based on an InN saturable absorber using GRIN coupling L. Monroy, M. Soriano-Amat, Ó. Esteban, E. Monroy, M. González-Herráez, and F. B. Naranjo
Optics Express 29 (18), 29357-29365 (2021)
Sub-250 fs passively mode-locked ultralong ring fibre oscillators F Gallazzi, M Jimenez-Rodriguez, E Monroy, P Corredera, M González-Herráez, FB Naranjo, JD Ania Castañón
Optics & Laser Technology 138, 106848 (2021)
Electron beam induced current microscopy of silicon p–n junctions in a scanning transmission electron microscope Aidan P Conlan, Grigore Moldovan, Lucas Bruas, Eva Monroy, David Cooper
Journal of Applied Physics 129, 135701 (2021)
Development of AlGaN/GaN heterostructures for electron-beam pumped UV lasers Sergi Cuesta-Arcos, Quang-Minh Thai, Yoann Curé, Fabrice Donatini, Edith Bellet-Amalric, Catherine Bougerol, Guilles Nogues, Stephen T. Purcell, Le Si Dang, Eva Monroy
SPIE Proc. 11686, 116860S (2021)
Improvement of critical temperature of niobium nitride deposited on 8-inch silicon wafers thanks to an AlN buffer layer Raouia Rhazi, Houssaine Machhadani, Catherine Bougerol, Stéphane Lequien, Eric Robin, Guillaume Rodriguez, Richard Souil, Jean-Luc Thomassin, Nicolas Mollard, Yohan Désières, Eva Monroy, Ségolène Olivier, Jean-Michel Gérard
Superconductor Science and Technology 34, 045002 (2021)
Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells Ashfaq Ahmad, Pawel Strak, Kamil Koronski, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Izabella Grzegory, Aleksandra Wierzbicka, Serhii Kryvyi, Eva Monroy, Agata Kaminska, Stanislaw Krukowski
Materials 14 (17), 4935 (2021)
AlGaN/GaN heterostructures with asymmetric graded-index separate confinement heterostructure for electron-beam pumped UV lasers Sergi Cuesta, Yoann Curé, Fabrice Donatini, Lou Denaix, Edith Bellet-Amalric, Catherine Bougerol, Vincent Grenier, Quang-Minh Thai, Gilles Nogues, Stephen T. Purcell, Le Si Dang, and Eva Monroy
Optics Express 29, 13084-13093 (2021)
Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale C Bougerol, E Robin, E Di Russo, E Bellet-Amalric, V Grenier, A Ajay, L Rigutti, and E Monroy
ACS Applied Materials & Interfaces 13, 4165-4173 (2021)
2020
InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes Ioanna Dimkou, Enrico Di Russo, Pradip Dalapati, Jonathan Houard, Nevine Rochat, David Cooper, Edith Bellet-Amarlic, Adeline Grenier, Eva Monroy, and Lorenzo Rigutti
ACS Applied Nano Materials 3 (10), 10133-10143 (2020)
UV-emission from GaN wires with m-plane core-shell GaN/AlGaN multiple quantum wells Vincent Grenier, Sylvain Finot, Gwenole Jacopin, Catherine Bougerol, Eric Robin, Nicolas Mollard, Bruno Gayral, Eva Monroy, Joel Eymery, and Christophe Durand
ACS Applied Materials & Interfaces 12 (39), 44007-44016 (2020)
Wurtzite quantum well structures under high pressure A Kaminska, K Koronski, P Strak, K Sobczak, E Monroy, and S Krukowski
Journal of Applied Physics 128 (5), 050901 (2020)
Correlated and in-situ electrical transmission electron microscopy studies and related membrane-chip fabrication M. Spies, Z. Sadre-Momtaz, J. Lähnemann, M. A. Luong, B. Fernandez, T. Fournier, E. Monroy and M. I. den Hertog
Nanotechnology 31, 472001 (2020)
Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters M. Spies, A. Ajay, E. Monroy, B. Gayral, and M.I. Den Hertog
Nano Letters 20, pp. 314-319 (2020)
Hydrostatic pressure dependence of indirect and direct excitons in InGaN/GaN quantum wells G. Staszczak, W. Trzeciakowski, E. Monroy, A. Bercha, G. Muzioł, C. Skierbiszewski, P. Perlin, and T. Suski
Phys. Rev. B 101, 085306 (2020)
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources I Dimkou, A Harikumar, F Donatini, J Lähnemann, MI den Hertog, C Bougerol, E Bellet-Amalric, N Mollard, A Ajay, G Ledoux, ST Purcell, and E Monroy
Nanotechnology 31, 204001 (2020)
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction E. Di Russo, A. Mavel, V. Fan Arcara, B. Damilano, I. Dimkou, S. Vézian, A. Grenier, M. Veillerot, N. Rochat, G. Feuillet, B. Bonef, L. Rigutti, J-Y. Duboz, E. Monroy, and D. Cooper
Nanotechnology 31, 465706 (2020)
Transferrable dielectric DBR membranes for versatile GaN-based polariton and VCSEL technology E. A. Amargianitakis, S. A. Kazazis, G. Doundoulakis, G. Stavrinidis, G. Konstantinidis, E. Delamadeleine, E. Monroy, and N. T. Pelekanos
Microelectron. Eng. 228, 111276 (2020)
Design of AlGaN/AlN Dot-in-a-wire Heterostructures for Electron-Pumped UV Emitters
I Dimkou, A Harikumar, A Ajay, F Donatini, E Bellet-Amalric, A Grenier, Martien I den Hertog, Stephen T Purcell, and Eva Monroy
physica status solidi (a) 217, 1900714 (2020)
Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures Pawel Strak, Kamil Koronski, Konrad Sakowski, Kamil Sobczak, Jolanta Borysiuk, Krzysztof P Korona, Piotr A Dróźdź, Ewa Grzanka, Marcin Sarzynski, Andrzej Suchocki, Eva Monroy, Stanislaw Krukowski, and Agata Kaminska
Journal of Alloys and Compounds 823, 153791 (2020)
Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements K. Sobczak, J. Borysiuk, P. Strąk, R. Jakieład, K.Koroński, A. Kaminska, E. Monroy, and S. Krukowski
Micron 134, 102864 (2020)
Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources A. Harikumar, F. Donatini, C. Bougerol, E. Bellet-Amalric, Q.-M. Thai, C. Dujardin, I. Dimkou, S. T. Purcell, and E. Monroy
Nanotechnology 31, (50), 505205 (2020)
2019
Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature Piotr M. Mensz, Ben Dror, Akhil Ajay, Catherine Bougerol, Eva Monroy, Meir Orenstein, and Gad Bahir
Journal of Applied Physics 125, 174505 (2019)
Effect of the residual doping on the performance of InN epilayers as saturable absorbers for ultrafast lasers at 1.55µm L. Monroy, M. Jiménez-Rodríguez, P. Ruterana, E. Monroy, M. González-Herráez, and F. B. Naranjo
Optical Materials Express 9, pp. 2785-2792 (2019)
Effect of Bias on the Response of GaN Axial p–n Junction Single-Nanowire Photodetectors S. Cuesta, M. Spies, V. Boureau, F. Donatini, M. Hocevar, M. I. den Hertog, and E. Monroy
Nano Letters 19 (8), 5506-5514 (2019)
Absorption in ultrathin GaN-based membranes: The role of standing wave effects EA Amargianitakis, R Jayaprakash, FG Kalaitzakis, E Delamadeleine, E Monroy, and NT Pelekanos
Journal of Applied Physics 126, 083109 (2019)Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars Jonas Lähnemann, David A. Browne, Akhil Ajay, Mathieu Jeannin, Angela Vasanelli, Jean-Luc Thomassin, Edith Bellet-Amalric, and Eva Monroy
Nanotechnology 30, 054002 (2019)
Improvement of the critical temperature of NbTiN films on III-nitride substrates Houssaine Machhadani, Julien Zichi, Catherine Bougerol, Stéphane Lequien, Jean-Luc Thomassin, Nicolas Mollard, Anna Mukhtarova, Val Zwiller, Jean-Michel Gérard, and Eva Monroy
Superconductor Science and Technology 32, 035008 (2019)
Nanowire photodetectors based on wurtzite semiconductor heterostructures M. Spies and E. Monroy
Semiconductor Science and Technology 34, 053002 (2019)
Electrical and optical properties of heavily Ge-doped AlGaN R. Blasco, A. Ajay, E. Robin, C. Bougerol, K. Lorenz, L. C. Alves, I. Mouton, L. Amichi, A. Grenier, and E. Monroy
Journal of Physics D: Applied Physics 52, 125101 (2019)
Improved GaN quantum well microcavities for robust room temperature polaritonics Emmanouil A Amargianitakis, Foteini Miziou, Maria Androulidaki, Katerina Tsagaraki, Athanasios Kostopoulos, George Konstantinidis, Eric Delamadeleine, Eva Monroy, and Nikos T Pelekanos
Physica status solidi (b), 1800716 (2019)
On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells M Jarema, M Gladysiewicz, E Zdanowicz, E Bellet-Amalric, E Monroy, and R Kudrawiec
Semiconductor Science and Technology 34, 075021 (2019)
2018
In-situ Biasing and Off-axis Electron Holography of a ZnO Nanowire Martien den Hertog, Fabrice Donatini, Robert McLeod, Eva Monroy, Corinne Sartel, Vincent Sallet, and Julien Pernot
Nanotechnology 29, 025710 (2018)
Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths A. Ajay, R. Blasco, J. Polaczyński, M. Spies, M.I. Den Hertog, and E. Monroy
Nanotechnology 29, 385201 (2018)
Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors Maria Spies, Jakub Polaczyński, Akhil Ajay, Dipankar Kalita, Minh Anh Luong, Jonas Lähnemann, Bruno Gayral, Martien I den Hertog, and Eva Monroy
Nanotechnology 29, 255204 (2018)
Switching of exciton character in double InGaN/GaN quantum wells T. Suski, G. Staszczak, K. P. Korona, P. Lefebvre, E. Monroy, P. A. Drozdz, G. Muzioł, C. Skierbiszewski, M. Kulczykowski, M. Matuszewski, E. Grzanka, S. Grzanka, K. Pieniak, K. Gibasiewicz, A. Khachapuridze, J. Smalc-Koziorowska, L. Marona, and P. Perlin
Physical Review B 98, 165302 (2018)
Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer Anna Mukhtarova, Luca Redaelli, Dibyendu Hazra, Houssaine Machhadani, Stéphane Lequien, Max Hofheinz, Jean-Luc Thomassin, Frederic Gustavo, Julien Zichi, Val Zwiller, Eva Monroy, Jean-Michel Gérard
Optics Express 26, pp. 17697-17704 (2018)
Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering A. Núñez-Cascajero, S. Valdueza-Felip, R. Blasco, M. de la Mata, S.I. Molina, M. González-Herráez, E. Monroy, and F. B. Naranjo
Journal of Alloys and Compounds 769, pp. 824-830 (2018)
Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies Kamil Koronski, Pawel Strak, Aleksandra Wierzbicka, Ewa Grzanka, Jolanta Borysiuk, Kamil Sobczak, Rafal Jakiela, Marta Sobanska, Kamil Klosek, Eva Monroy, Zbigniew R Zytkiewicz, Stanislaw Krukowski, and Agata Kaminska
Journal of Alloys and Compounds 769, pp. 1064-1071 (2018)
Ultrafast Fiber Laser using InN as Saturable Absorber Mirror Marco Jiménez-Rodríguez, Eva Monroy, Miguel González-Herráez, and Fernando B. Naranjo
Journal of Lightwave Technology 36, pp. 2175-2182 (2018)
2017
Infrared Emitters using III-Nitride Semiconductors A. Ajay, Y. Kotsar and E. Monroy
in
“Nitride semiconductor Light-Emitting Diodes (LEDs) (2nd edition)”, edited by J. J. Huang, H.-C. Kuo, and S.-C. Shen (Woodhead Publishing Limited, Cambridge, UK, Oct. 2017). ISBN: 978-0-08-101942-9
III-Nitride nanostructures for Intersubband optoelectronics C. B. Lim, A. Ajay, J. Lähnemann, D. A. Browne, and E. Monroy
in
“III-Nitride Materials, Devices and Nano-Structures”, edited by Z. C. Feng (World Scientific Publishing Co Pte Ltd, June 2017). ISBN: 978-1-78634-320-8
Intersubband optoelectronics using III-nitride semiconductors C. B. Lim, A. Ajay, J. Lähnemann, D. A. Browne, and E. Monroy
in "
Handbook of GaN Semiconductor Materials and Devices", edited by W. Bi, H.-C. Kuo, P.-C. Ku, and B. Shen (Taylor & Francis, New York, Oct. 2017). ISBN: 978-1-49874-713-4
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors Maria Spies, Martien I. Den Hertog, Pascal Hille, Jörg Schörmann, Jakub Polaczyński, Bruno Gayral, Martin Eickhoff, Eva Monroy, and Jonas Lähnemann
Nano Letters 17, pp 4231–4239 (2017)
Carrier localization in GaN/AlN quantum dots as revealed by three-dimensional multimicroscopy Lorenzo Mancini, Florian Moyon, David Hernàndez-Maldonado, Ivan Blum, Jonathan Houard, Williams Lefebvre, François Vurpillot, Aparna Das, Eva Monroy, and Lorenzo Rigutti
Nano Letters 17, 4261–4269 (2017)
Near-infrared intersubband photodetection in GaN/AlN nanowires Jonas Lähnemann, Akhil Ajay, Martien Ilse Den Hertog, and Eva Monroy
Nano Letters 17, 6954–6960 (2017)
Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures Jan Müßener, Pascal Hille, Tim Grieb, Jörg Schörmann, Jörg Teubert, Eva Monroy, Andreas Rosenauer, and Martin Eickhoff
ACS Nano 11, 8758–8767 (2017)
Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap Rahul Jayaprakash, Fotis Kalaitzakis, Gabriel Christmann, Katerina Tsagaraki, Moïra Hocevar, Bruno Gayral, Eva Monroy, and Nikos Pelekanos
Scientific Reports 7, 5542 (2017)
Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures Akhil Ajay, Caroline B. Lim, David A. Browne, Jakub Polaczyński, Edith Bellet-Amalric, Joel Bleuse, Martien den Hertog, and Eva Monroy
Nanotechnology 28, 405204 (2017)
P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm S. Valdueza-Felip, A. Ajay, L. Redaelli, M.P. Chauvat, P. Ruterana, T. Cremel, M. Jiménez-Rodríguez, K. Kheng, and E. Monroy
Solar Energy Materials & Solar Cells 160, 355–360 (2017)
Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics Luca Redaelli, Val Zwiller, Eva Monroy, and Jean-Michel Gerard
Superconductor Science and Technology 30, 035005 (2017)
Effect of Ge-doping on the short-wave, mid-and far-infrared intersubband transitions in GaN/AlGaN heterostructures Caroline Botum Lim, Akhil Ajay, Jonas Lähnemann, Catherine Bougerol, and Eva Monroy
Semiconductor Science and Technology 32, 125002 (2017)
Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber M. Jimenez-Rodriguez, L. Monteagudo-Lerma, E. Monroy, M. González-Herráez, and F. B. Naranjo
Optics Express 25, pp. 5366-5375 (2017)
In rich AlxIn1?xN grown by RF sputtering on sapphire: from closely packed columnar to high surface quality compact layers Arántzazu Núñez-Cascajero, Sirona Valdueza-Felip, Laura Monteagudo-Lerma, Eva Monroy, Elaine Taylor, Robert Martin, Miguel Gonzalez-Herraez, and Fernando B. Naranjo
Journal of Physics D: Applied Physics 50, 065101 (2017)
Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip L. Mancini, F. Moyon, J. Houard, I. Blum, W. Lefebvre, F. Vurpillot, A. Das, E. Monroy, and L. Rigutti
Applied Physics Letters 111, 243102 (2017)
Gallium kinetics on m-plane GaN
Caroline B. Lim, Akhil Ajay, and Eva Monroy
Applied Physics Letters 111, 022101 (2017)
Short-wave infrared (λ=3 μm) intersubband polaritons in the GaN/AlN system Thibault Laurent, Jean-Michel Manceau, Eva Monroy, Caroline B. Lim, Stéphanie Rennesson, Fabrice Semond, Francois H. Julien, and Raffaele Colombelli
Applied Physics Letters 110, 131102 (2017)
Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures Pawel Strak, Pawel Kempisty, Konrad Sakowski, Agata Kaminska, Dawid Jankowski, Krzysztof P. Korona, Kamil Sobczak, Jolanta Borysiuk, Mark Beeler, Ewa Grzanka, Eva Monroy, and Stanislaw Krukowski
AIP Advances 7, 015027 (2017)
Experimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids Mikhail G. Brik, Sebastian Mahlik, Dawid Jankowski, Pawel Strak, Krzysztof P. Korona, Eva Monroy, Stanislaw Krukowski, and Agata Kaminska
Japanese Journal of Applied Physics 56, 05FA02 (2017)
Effect of Al incorporation in nonpolar m-plane GaN/AlGaN multi-quantum-wells using plasma-assisted molecular-beam epitaxy Caroline B. Lim, Akhil Ajay, Catherine Bougerol, Edith Bellet-Amalric, Jörg Schörmann, Mark Beeler, and Eva Monroy
Physica Status Solidi A 214, 1600849 (2017)
Development of AlInN photoconductors deposited by sputtering Arántzazu Núñez-Cascajero, Arántzazu Núñez-Cascajero, Marco Jiménez-Rodríguez, Eva Monroy, Miguel González-Herráez, and Fernando B. Naranjo
Physica Status Solidi A 214, 1600780 (2017)
Intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures in self-assembled nanowire and 2D layers Akhil Ajay, Caroline B. Lim, David A. Browne, Jakub Polaczyński, Edith Bellet-Amalric, Martien I. den Hertog and Eva Monroy
Physica status solidi B 254, 1600734 (2017)
High absorption efficiency and polarization-insensitivity in superconducting-nanowire single-photon detectors Luca Redaelli, Gabriele Bulgarini, Sergiy Dobrovolskiy, Sander Dorenbos, Anna Mukhtarova, Val Zwiller, Eva Monroy, and Jean-Michel Gérard
Proc. of SPIE 10111, 101112K (2017)
2016
UV Photosensing Characteristics of Nanowire Based GaN/AlN Superlattices Jonas Lähnemann, Martien I den Hertog, Pascal Hille, María de la Mata, Thierry Fournier, Jörg Schörmann, Jordi Arbiol, Martin Eickhoff, and Eva Monroy
Nano Letters 16, 3260-3267 (2016)
Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures
C. B. Lim, A. Ajay, C. Bougerol, J. Lähnemann, F. Donatini, J. Schörmann, E. Bellet-Amalric, D. A. Browne, M. Jiménez-Rodríguez, and E. Monroy
Nanotechnology 27, 145201 (2016)
Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography Bastien Bonef, Miguel Lopez-Haro, Lynda Amichi, Mark Beeler, Adeline Grenier, Eric Robin, Pierre-Henri Jouneau, Nicolas Mollard, Isabelle Mouton, Eva Monroy, and Catherine Bougerol
Nanoscale Research Letters 11, 461
(2016)
Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors S. Joglekar, M. Azize, M. Beeler, E. Monroy, and T. Palacios
Applied Physics Letters 109, 041602 (2016)
Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness Anna Mukhtarova, Sirona Valdueza-Felip, Luca Redaelli, Christophe Durand, Catherine Bougerol, Eva Monroy, and Joël Eymery
Applied Physics Letters 108, 161907 (2016)
Design of broadband high-efficiency superconducting-nanowire single photon detectors Luca Redaelli, Gabriele Bulgarini, Sergiy Dobrovolskiy, Sander N. Dorenbos, Val Zwiller, Eva Monroy, and Jean-Michel Gérard
Superconductor Science and Technology 29, 065016 (2016)
Ge doping of GaN beyond the Mott transition A. Ajay, J. Schörmann, M. Jimenez-Rodriguez, C. B. Lim, F. Walther, M. Rohnke, I. Mouton, L. Amichi, C. Bougerol, M. den Hertog, M. Eickhoff, and E. Monroy
Journal of Physics D: Applied Physics 49, 445301 (2016)
Correlation of optical and structural properties of GaN/AlN multi-quantum wells - ab initio and experimental study A. Kaminska, P. Strak, J. Borysiuk, K. Sobczak, J. Domagala, M. Beeler, E. Grzanka, K. Sakowski, S. Krukowski, and E. Monroy
Journal of Applied Physics 119, 015703 (2016)
High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells - experimental and theoretical analysis Agata Kaminska, Dawid Jankowski, Pawel Strak, Krzysztof Piotr Korona, Mark Beeler, Konrad Sakowski, Ewa Grzanka, Jolanta Borysiuk, Kamil Sobczak, Eva Monroy, and Stanislaw Krukowski
Journal of Applied Physics 120, 095705 (2016)
Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer L. Monteagudo-Lerma, S. Valdueza-Felip, A. Núñez-Cascajero, A. Ruiz, M. González-Herráez, E. Monroy, and F. B. Naranjo
Journal of Crystal Growth 434, 13-18 (2016)
III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm L. Monteagudo-Lerma, F. B. Naranjo, S. Valdueza-Felip, M. Jiménez-Rodríguez, E. Monroy, P. A. Postigo, P. Corredera, and M. González-Herráez
physica status solidi (a) 213, 1269-1275 (2016)
Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures C.B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol, J. Schörmann, M. Eickhoff, and E. Monroy
Japanese Journal of Applied Physics 55, 05FG05 (2016)
Study of high In content AlInN deposition on p-Si (111) by rf-sputtering A. Núñez-Cascajero, L. Monteagudo-Lerma, S. Valdueza-Felip, C. Navío, E. Monroy, M. González-Herráez, and F. B. Naranjo
Japanese Journal of Applied Physics 55, 05FB07 (2016)
2015
III-Nitride Semiconductors: New Infrared Intersubband Technologies M Beeler and E Monroy
in
“Gallium Nitride (GaN): Physics, Devices, and Technology”, edited by F. Medjdoub and K. Iniewski (Taylor & Francis, New York, Aug. 2015). ISBN: 9781482220032
Long-lived excitons in GaN/AlN nanowire heterostructures M. Beeler, C. B. Lim, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff, and E. Monroy
Phys. Rev. B 91, 205440 (2015)
Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol, and E. Monroy
J. Appl. Phys. 118, 014309 (2015)
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schormann, M. Beeler, J. Lähnemann, M. Eickhoff, and E. Monroy
Nanotechnology 43, 435201 (2015)
Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells L. Redaelli, A. Mukhtarova, A. Ajay, A. Núñez-Cascajero, S. Valdueza-Felip, J. Bleuse, C. Durand, J. Eymery, and E. Monroy
Jpn. J. Appl. Phys. 54, 072302 (2015)
2014
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures M. Beeler, P. Hille, J. Schörmann, J Teubert, M. de la Mata, J. Arbiol, M. Eickhoff, and E. Monroy
Nano Lett. 14, pp.1665-1673 (2014)
High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Band Gap GaN Electrodes Functionalized with Biomembrane Models Nataliya Frenkel, Jens Wallys, Jörg Teubert, Aparna Das, Eva Monroy, Stefan Kaufmann, Martin Eickhoff, and Motomu Tanaka
Advanced Functional Materials 24, pp.4927–4934 (2014)
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, and E. Monroy
Appl. Phys. Lett. 105, 131105 (2014)
Pseudo-square AlGaN/GaN quantum wells for terahertz absorption M. Beeler, C. Bougerol, E. Bellet-Amalric, and E. Monroy
Appl. Phys. Lett. 105, 131106 (2014)
Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission C. Himwas, M. den Hertog, Le Si Dang, E. Monroy, and R. Songmuang
Appl. Phys. Lett. 105, 241908 (2014)
Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots C Himwas, M den Hertog, E Bellet-Amalric, R Songmuang, F Donatini, Le Si Dang, and E. Monroy
J. Appl. Phys. 116, 023502 (2014)
Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration S. Valdueza-Felip, A. Mukhtarova, L. Grenet, C. Bougerol, C. Durand, J. Eymery, and E. Monroy
Appl. Phys. Express 7, 032301 (2014)
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero, Y. Wang, M.-P. Chauvat, P. Ruterana, S. Pouget, K. Lorenz, E. Alves, E. Monroy
J. Appl. Phys. 116, 233504 (2014)
High-quality NbN nanofilms on a GaN/AlN heterostructure D. Sam-Giao, S. Pouget, C. Bougerol, E. Monroy, A. Grimm, S. Jebari, M. Hofheinz, J.-M. Gérard, and V. Zwiller
AIP Advances 4, 107123 (2014)
THz intersubband transitions in AlGaN/GaN multi-quantum-wells M. Beeler, C. Bougerol, E. Bellet-Amalaric, and E. Monroy
Phys. Stat. Sol. A 211, 761-764 (2014)
Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications R. Jayaprakash, F. Kalaitzakis, M. Kayambaki, K. Tsagaraki, Eva Monroy, and Nikos T. Pelekanos
Journal of Materials Science 49, 4018-4024
(2014)
2013
GaN-based Single-Nanowire Devices R. Songmuang and E. Monroy
in
“III-nitride semiconductors and their modern devices”, edited by B. Gil (Oxford University Press, Oxford, UK, August 2013). ISBN: 978-0199681723
III-Nitride Semiconductors for Intersubband Optoelectronics: A review M. Beeler, E. Trichas, and E. Monroy
Semicond. Sci. Technol. 28, 074022 (2013)
THz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design M. Beeler, C. Bougerol, E. Bellet-Amalric, and E. Monroy
Appl. Phys. Lett. 103, 091108 (2013)
GaN/AlGaN waveguide quantum cascade photodetectors at λ≈1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth S. Sakr, P. Crozat, D. Gacemi, Y. Kotsar, A. Pesach, P. Quach, N. Isac, M. Tchernycheva, L. Vivien, G. Bahir, E. Monroy, and F. H. Julien
Appl. Phys. Lett. 102, 011135 (2013)
All-dielectric GaN microcavity: Strong coupling and lasing at room temperature K. S. Daskalakis, P. S. Eldridge, G. Christmann, E. Trichas, R. Murray, E. Iliopoulos, E. Monroy, N. T. Pelekanos, J. J. Baumberg, and P. G. Savvidi
Appl. Phys. Lett. 102, 101113 (2013)
Environmental sensitivity of
n-i-n and undoped single GaN nanowire photodetectors F. Gonzalez-Posada, R. Songmuang, M. den Hertog, and E. Monroy
Appl. Phys. Lett. 102, 213113 (2013)
Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells E. Gross, A. Nevet, A. Pesach, E. Monroy, S. E. Schacham, M. Orenstein, M. Sergev, and G. Bahir
Optics Express 21, pp. 3809-3817 (2013)
Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs
L. Monteagudo-Lerma, S. Valdueza-Felip, F. B. Naranjo, P. Corredera, L. Rapenne, E. Sarigiannidou, G. Strasser, E. Monroy, and M. González-Herráez
Optics Express 21, pp. 27578-27586 (2013)
Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells H. Machhadani, M. Beeler, S. Sakr, E. Warde, Y. Kotsar, M. Tchernycheva, M. P. Chauvat, P. Ruterana, G. Nataf, Ph. De Mierry, E. Monroy, and F. H. Julien
J. Appl. Phys.
113, 143109 (2013)
InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface J. Teubert, S. Koslowski, S. Lippert, M. Schäfer, J. Wallys, G. Dimitrakopulos, Th. Kehagias, Ph. Komninou, A. Das, E. Monroy, and M. Eickhoff
J. Appl. Phys.
114, 074313 (2013)
Two-step method for the deposition of AlN by radio-frequency sputtering L. Monteagudo-Lerma, S. Valdueza-Felip, A. Núñez-Cascajero, M. González-Herráez, E. Monroy, and F. B. Naranjo
Thin Solid Films
545, pp. 149-153 (2013)
Photovoltaic response of InGaN/GaN multiple-quantum well solar cells S. Valdueza-Felip, A. Mukhtarova, Q. Pan, G. Altamira, L. Grenet, C. Durand, C. Bougerol, D. Peyrade, F. González-Posada, J. Eymery, and E. Monroy
Jpn. J. Appl. Phys. 52, 08JH05 (2013)
Photocurrent phenomena in nanoribbon InAlN/GaN HEMTs F. González-Posada, M. Azize, X.Gao, S. Guo, E. Monroy, and T. Palacios
Jpn. J. Appl. Phys. 52, 08JE19 (2013)
Single GaN-based Nanowires for Photodetection and Sensing Applications M. den Hertog, R. Songmuang, F. González-Posada, and E. Monroy
Jpn. J. Appl. Phys. 52, 11NG01 (2013)
InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies A. Mukhtarova, S. Valdueza-Felip, C. Durand, Q. Pan, L. Grenet, D. Peyrade, C. Bougerol, W. Chikhaoui, E. Monroy, and J. Eymery
Phys. Stat. Sol. C 10, pp. 350–354 (2013)
AlGaN/AlN quantum dots for UV light emitters C. Himwas, M. den Hertog, F. Donatini, Le Si Dang, L. Rapenne, E. Sarigiannidou, R. Songmuang, and E. Monroy
Phys. Stat. Sol. C 10, pp. 285–288 (2013)
Polarization fields in GaN/AlN nanowire heterostructures studied by off-axis holography M. den Hertog, R. Songmuang, and E. Monroy
Journal of Physics: Conference Series 471, 012019 (2013)
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN heterostructure waveguides A. Lupu, M. Tchernycheva, S. Sakr, Y. Kotsar, N. Isac, E. Monroy, and F.H. Julien
Proc. SPIE 8625, 86251X (2013)
III-nitride nanostructures for optical gas detection and pH sensing S Paul, K Maier, A Das, F Furtmayr, A Helwig, J Teubert, E Monroy, G Müller, and M. Eickhoff
Proc. SPIE 8725, 87250K (2013)
2012
Ultrafast nonlinear optical response in GaN/AlN quantum dots for optical switching applications at 1.55 μm
S. Valdueza-Felip, F. B. Naranjo, M. González-Herráez, E. Monroy, and J. Solís
in
“Quantum Dots- A Variety of New Applications”, edited by Ameenah Al-Ahmadi (Intech, Rijeka, Croatia, April 2012). ISBN: 978-953-51-0483-4
Room temperature photodetection dynamics of single GaN nanowires F. González-Posada, R. Songmuang, M. Den Hertog, and E. Monroy
Nano Lett. 12, 172–176 (2012)
Correlation of polarity and crystal structure with opto-electronic and transport properties of GaN/AlN/GaN nanowire sensors M. I. den Hertog, F. González-Posada, R. Songmuang, J.-L Rouviere, T. Fournier, B. Fernandez, and E. Monroy
Nano Lett. 12, 5691-5696 (2012)
Coupling of intersubband transitions to zone-folded acoustic phonons in a GaN/AlN superlattice C. Aku-Leh, K. Reimann, M. Woerner, E. Monroy, and D. Hofstetter
Phys. Rev. B 85, 155323 (2012)
Carrier localization in InN/InGaN multiple-quantum wells with high In-content S. Valdueza-Felip, L. Rigutti, F. B. Naranjo, P. Ruterana, J. Mangeney, F. H. Julien, M. González-Herráez, and E. Monroy
Appl. Phys. Lett. 101, 062109 (2012)
Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots C. Himwas, R. Songmuang, Le Si Dang, J. Bleuse, L. Rapenne, E. Sarigiannidou, and E. Monroy
Appl. Phys. Lett. 101, 241914 (2012)
Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer S. Valdueza-Felip, J. Ibáñez, E. Monroy, M. González-Herráez, L. Artús, and F. B. Naranjo
Thin Solid Films 520, pp. 2805-2809 (2012)
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells A. Lupu, M. Tchernycheva, Y. Kotsar, E. Monroy, and F. H. Julien
Optics Express 20, 12541–12549 (2012)
Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure S. Sakr, Y. Kotsar, M. Tchernycheva, E. Warde, N. Isac, E. Monroy, and F. H. Julien
Appl. Phys. Express 5, 052203 (2012)
Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires A. M. Fischer, K. W. Sun, F. A. Ponce, R. Songmuang, and E. Monroy
Appl. Phys. Express 5, 025001 (2012)
Morphology and origin of V-pits in semipolar (11-22) InGaN A. Lotsari, A. Das, Th. Kehagias, Y. Kotsar, E. Monroy, Th. Karakostas, P. Gladkov, Ph. Komninou, G.P. Dimitrakopulos
J. Cryst. Growth 339, 1-7 (2012)
Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A. Das, E. Monroy, Ph. Komninou
Microelectronic Engineering 90, pp. 108-111 (2012)
Structure and Strain State of Polar and Semipolar InGaN Quantum Dots T. Koukoula, A. Lotsari, Th. Kehagias, G. P. Dimitrakopulos, I. Häusler, A. Das, E. Monroy, Th. Karakostas, and Ph. Komninou
Appl. Surf. Sci. 260, pp. 7-12 (2012)
GaN-based nanowire photodetectors F. González-Posada, R. Songmuang, M. Den Hertog, and E. Monroy
Proc. SPIE 8268, 82680P (2012)
III-nitride intersubband photonics S. Sakr, M. Tchernycheva, J. Mangeney, E. Warde, N. Isac, L. Rigutti, R. Colombelli, A. Lupu, L. Vivien, F. H. Julien, A. Vardi, S. E. Schacham, G. Bahir, Y. Kotsar, E. Monroy, E. Giraud, D. Martin, and N. Grandjean
Proc. SPIE 8262, 82621Q (2012)
Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells S. Valdueza-Felip, L. Rigutti, F. B. Naranjo, B. Lacroix, S. Fernández, P. Ruterana, F. H. Julien, M. González-Herráez, and E. Monroy
Phys. Stat. Sol. A 209, pp. 17-20 (2012)
Responsivity and photocurrent dynamics in single n-i-n GaN nanowires F. González-Posada, R. Songmuang, M. Den Hertog, and E. Monroy
Phys. Stat. Sol. C 9, pp. 642-645 (2012)
1997-2011Publications 1997-2011
PhD ThesisFabien GUILLOT,
“Development of nitride-based nanostructures for infrared optoelectronics”, Nov. 2007
Sylvain LECONTE,
“Study of vertical transport in GaN-based heterostructures for opto- and micro-electronics”, Mar. 2009
Lise LAHOURCADE,
“Plasma-assisted moleuclar beam epitaxy of (11-22)-oriented III-nitrides”, Oct. 2009
Prem Kumar KANDASWAMY, “
Al(Ga)N Nanostructures for near- and mid-infrared intersubband optoelectronics”, Jun. 2010
Aparna DAS, “
III-Nitride quantum dots for application to opto-chemical sensors”, Jun. 2012
Yulia KOTSAR,
"GaN/Al(Ga)N quantum wells for intersubband optoelectronics in the near-, mid- and far-infrared", Oct. 2012
Chalermchai HIMWAS,
"Nitride-based nanostructures for ultraviolet emission", Jan. 2015
Mark BEELER,
"Quantum engineering of III-nitride nanostructures for infrared photonics", Jun. 2015
Caroline B. LIM,
"GaN/Al(Ga)N heterostructures for infrared optoelectronics: Polar and nonpolar orientations", Jun. 2017
Akhil AJAY,
"GaN/AlGaN nanowires for quantum devices", Sept. 2018
Maria SPIES, "
Correlated electro-optical and TEM studies on single III-N nanowire heterostructures", Oct. 2019
Ioanna DIMKOU, "
Correlative microscopy of III-N nanostructures: Application to photonics and power electronics", Oct. 2021
Anjali HARIKUMAR,
"Development of AlGaN nanostructure s for electron-pumped UV light emitting devices", Jun. 2022
Sergi CUESTA, "
Development of AlGaN nanostructures for the fabrication of electron pumped UV lasers", Dec. 2022