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Publications of the team in 2014

Published on 14 December 2018

Cu2ZnSn(S1-xSex)(4) thin films for photovoltaic applications: Influence of the precursor stacking order on the selenization process
Altamura G, Grenet L, Bougerol C, Robin E, Kohen D, Fournier H, Brioude A, Perraud S and Mariette H
Journal of Alloys and Compounds 588 (2014) 310-315
http://dx.doi.org/10.1016/j.jallcom.2013.11.068
HAL <hal-01597134>

Quantum Dot parametric source
Andronico A, Gerard J-M, Favero I, Ducci S and Leo G
Optics Communications 327 (2014) 27-30
http://dx.doi.org/10.1016/j.optcom.2014.02.029

Ultra long and Defect-Free GaN Nanowires Grown by the HVPE Process
Avit G, Lekhal K, Andre Y, Bougerol C, Reveret F, Leymarie J, Gil E, Monier G, Castelluci D and Trassoudaine A
Nano Letters 14 (2014) 559-562
http://dx.doi.org/10.1021/nl403687h

THz intersubband transitions in AlGaN/GaN multi-quantum-wells
Beeler M, Bougerol C, Bellet-Amalaric E and Monroy E
Physica Status Solidi a-Applications and Materials Science 211 (2014) 761-764
http://dx.doi.org/10.1002/pssa.201300431

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption
Beeler M, Bougerol C, Bellet-Amalric E and Monroy E
Applied Physics Letters 105 (2014) 131106
http://dx.doi.org/10.1063/1.4896768

Intraband Absorption in Self-Assembled Ge-Doped GaN/AlN Nanowire Heterostructures
Beeler M, Hille P, Schoermann J, Teubert J, de la Mata M, Arbiol J, Eickhoff M and Monroy E
Nano Letters 14 (2014) 1665-1673
http://dx.doi.org/10.1021/n15002247

Atomic scale investigations on CdxZn1-xSe quantum dots: Correlation between the composition and emission properties
Benallali H, Cremel T, Hoummada K, Mangelinck D, Andre R, Tatarenko S and Kheng K
Applied Physics Letters 105 (2014) 053103
http://dx.doi.org/10.1063/1.4891635

Quantum optics with quantum dots Towards semiconductor sources of quantum light for quantum information processing
Beveratos A, Abram I, Gerard J-M and Robert-Philip I
European Physical Journal D 68 (2014) 377
http://dx.doi.org/10.1140/epjd/e2014-50717-x

Quantum contextuality in a Young-type interference experiment
Borges G, Carvalho M, de Assis P-L, Ferraz J, Araujo M, Cabello A, Cunha MT and Padua S
Physical Review A 89 (2014) 052106
http://dx.doi.org/10.1103/PhysRevA.89.052106

Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
Claudel A, Fellmanna V, Gelard I, Coudurier N, Sauvage D, Balaji M, Blanquet E, Boichot R, Beutier G, Coindeau S, et al.
Thin Solid Films 573 (2014) 140-147
http://dx.doi.org/10.1016/j.tsf.2014.11.022

III-Nitride quantum dots in nanowires: Growth, structural, and optical properties
Daudin B
Turkish Journal of Physics 38 (2014) 314-322
http://dx.doi.org/10.3906/fiz-1405-11

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission
Durand C, Bougerol C, Carlin J-F, Rossbach G, Godel F, Eymery J, Jouneau P-H, Mukhtarova A, Butte R and Grandjean N
ACS Photonics 1 (2014) 38-46
http://dx.doi.org/10.1021/ph400031x

Boron-doped superlattices and Bragg mirrors in diamond
Fiori A, Bousquet J, Eon D, Omnes F, Bellet-Amalric E and Bustarret E
Applied Physics Letters 105 (2014) 081109
http://dx.doi.org/10.1063/1.4894376

High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models
Frenkel N, Wallys J, Lippert S, Teubert J, Kaufmann S, Das A, Monroy E, Eickhoff M and Tanaka M
Advanced Functional Materials 24 (2014) 4927-4934
http://dx.doi.org/10.1002/adfm.201400388

Analysis of photovoltaic properties of Cu2ZnSn(S,Se)(4)-based solar cells
Grenet L, Fillon R, Altamura G, Fournier H, Emieux F, Faucherand P and Perraud S
Solar Energy Materials and Solar Cells 126 (2014) 135-142
http://dx.doi.org/10.1016/j.solmat.2014.03.053

Experimental evidence of light soaking effect in Cd-free Cu2ZnSn(S,Se)(4)-based solar cells
Grenet L, Grondin P, Coumert K, Karst N, Emieux F, Roux F, Fillon R, Altamura G, Fournier H, Faucherand P, et al.
Thin Solid Films 564 (2014) 375-378
http://dx.doi.org/10.1016/j.tsf.2014.05.033

Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
Himwas C, den Hertog M, Bellet-Amalric E, Songmuang R, Donatini F, Dang LS and Monroy E
Journal of Applied Physics 116 (2014) 023502
http://dx.doi.org/10.1063/1.4887140

Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission
Himwas C, den Hertog M, Dang LS, Monroy E and Songmuang R
Applied Physics Letters 105 (2014) 241908
http://dx.doi.org/10.1063/1.4904989

Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications
Jayaprakash R, Kalaitzakis FG, Kayambaki M, Tsagaraki K, Monroy E and Pelekanos NT
Journal of Materials Science 49 (2014) 4018-4024
http://dx.doi.org/10.1007/s10853-014-8071-0

Influence of free carriers on exciton ground states in quantum wells
Klochikhin AA, Kochereshko VP and Tatarenko S
Journal of Luminescence 154 (2014) 310-315
http://dx.doi.org/10.1016/j.jlumin.2014.04.039

Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy
Lavenus P, Messanvi A, Rigutti L, De Luna Bugallo A, Zhang H, Bayle F, Julien FH, Eymery J, Durand C and Tchernycheva M
Nanotechnology 25 (2014) 255201
http://dx.doi.org/10.1088/0957-4484/25/25/255201

Anisotropic In distribution in InGaN core-shell nanowires
Leclere C, Katcho NA, Tourbot G, Daudin B, Proietti MG and Renevier H
Journal of Applied Physics 116 (2014) 013517
http://dx.doi.org/10.1063/1.4886756

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field
Mancini L, Amirifar N, Shinde D, Blum I, Gilbert M, Vella A, Vurpillot F, Lefebvre W, Larde R, Talbot E, et al.
Journal of Physical Chemistry C 118 (2014) 24136-24151
http://dx.doi.org/10.1021/jp5071264

Exploring Single Semiconductor Nanowires with a Multimodal Hard X-ray Nanoprobe
Martinez-Criado G, Segura-Ruiz J, Alen B, Eymery J, Rogalev A, Tucoulou R and Homs A
Advanced Materials 26 (2014) 7873-7879
http://dx.doi.org/10.1002/adma.201304345

Aluminum nitride photonic crystals and microdiscs for ultra-violet nanophotonics
Neel D, Roland I, Checoury X, El Kurdi M, Sauvage S, Brimont C, Guillet T, Gayral B, Semond F and Boucaud P
Advances in Natural Sciences-Nanoscience and Nanotechnology 5 (2014) 023001
http://dx.doi.org/10.1088/2043-6262/5/2/023001

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
Nogues G, Auzelle T, Den Hertog M, Gayral B and Daudin B
Applied Physics Letters 104 (2014) 102102
http://dx.doi.org/10.1063/1.4868131

Excitonic recombinations in h-BN: From bulk to exfoliated layers
Pierret A, Loayza J, Berini B, Betz A, Placais B, Ducastelle F, Barjon J and Loiseau A
Physical Review B 89 (2014) 035414
http://dx.doi.org/10.1103/PhysRevB.89.035414

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
Redaelli L, Mukhtarova A, Valdueza-Felip S, Ajay A, Bougerol C, Himwas C, Faure-Vincent J, Durand C, Eymery J and Monroy E
Applied Physics Letters 105 (2014) 131105
http://dx.doi.org/10.1063/1.4896679

Correlation of Microphotoluminescence Spectroscopy, Scanning Transmission Electron Microscopy, and Atom Probe Tomography on a Single Nano-object Containing an InGaN/GaN Multiquantum Well System
Rigutti L, Blum I, Shinde D, Hernandez-Maldonado D, Lefebvre W, Houard J, Vurpillot F, Vella A, Tchernycheva M, Durand C, et al.
Nano Letters 14 (2014) 107-114
http://dx.doi.org/10.1021/nl4034768

GaN:Pr3+ nanostructures for red solid state light emission
Rodrigues J, Ben Sedrine N, Felizardo M, Soares MJ, Alves E, Neves AJ, Fellmann V, Tourbot G, Auzelle T, Daudin B, et al.
RSC Advances 4 (2014) 62869-62877
http://dx.doi.org/10.1039/c4ra08571j

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon
Roland I, Zeng Y, Han Z, Checoury X, Blin C, El Kurdi M, Ghrib A, Sauvage S, Gayral B, Brimont C, et al.
Applied Physics Letters 105 (2014) 011104
http://dx.doi.org/10.1063/1.4887065

Structure and Morphology in Diffusion-Driven Growth of Nanowires: The Case of ZnTe
Rueda-Fonseca P, Bellet-Amalric E, Vigliaturo R, den Hertog M, Genuist Y, Andre R, Robin E, Artioli A, Stepanov P, Ferrand D, et al.
Nano Letters 14 (2014) 1877-1883
http://dx.doi.org/10.1021/nl4046476

GaN wire-based Langmuir-Blodgett films for self-powered flexible strain sensors
Salomon S, Eymery J and Pauliac-Vaujour E
Nanotechnology 25 (2014) 375502
http://dx.doi.org/10.1088/0957-4484/25/37/375502

High-quality NbN nanofilms on a GaN/AlN heterostructure
Sam-Giao D, Pouget S, Bougerol C, Monroy E, Grimm A, Jebari S, Hofheinz M, Gerard J-M and Zwiller V
AIP Advances 4 (2014) 107123
http://dx.doi.org/10.1063/1.4898327
HAL <hal-01226736>

Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors
Tchernycheva M, Messanvi A, de Luna Bugallo A, Jacopin G, Lavenus P, Rigutti L, Zhang H, Halioua Y, Julien FH, Emery J, et al.
Nano Letters 14 (2014) 3515-3520
http://dx.doi.org/10.1021/nl501124s

Differential ultrafast all-optical switching of the resonances of a micropillar cavity
Thyrrestrup H, Yuce E, Ctistis G, Claudon J, Vos WL and Gerard J-M
Applied Physics Letters 105 (2014) 111115
http://dx.doi.org/10.1063/1.4896160

A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures
Tizei LHG, Meuret S, March K, Hestroffer K, Auzelle T, Daudin B and Kociak M
Applied Physics Letters 105 (2014) 143106
http://dx.doi.org/10.1063/1.4897408

Competing supersolids of Bose-Bose mixtures in a triangular lattice
Trousselet F, Rueda-Fonseca P and Ralko A
Physical Review B 89 (2014) 085104
http://dx.doi.org/10.1103/PhysRevB.89.085104

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
Valdueza-Felip S, Bellet-Amalric E, Nunez-Cascajero A, Wang Y, Chauvat MP, Ruterana P, Pouget S, Lorenz K, Alves E and Monroy E
Journal of Applied Physics 116 (2014) 233504
http://dx.doi.org/10.1063/1.4903944

Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration
Valdueza-Felip S, Mukhtarova A, Grenet L, Bougerol C, Durand C, Eymery J and Monroy E
Applied Physics Express 7 (2014) 032301
http://dx.doi.org/10.7567/APEX.7.032301

Frequency cavity pulling induced by a single semiconductor quantum dot
Valente D, Suffczynski J, Jakubczyk T, Dousse A, Lemaitre A, Sagnes I, Lanco L, Voisin P, Auffeves A and Senellart P
Physical Review B 89 (2014) 041302
http://dx.doi.org/10.1103/PhysRevB.89.041302

Strain-mediated coupling in a quantum dot-mechanical oscillator hybrid system
Yeo I, de Assis PL, Gloppe A, Dupont-Ferrier E, Verlot P, Malik NS, Dupuy E, Claudon J, Gerard J-M, Auffeves A, et al.
Nature Nanotechnology 9 (2014) 106-110
http://dx.doi.org/10.1038/nnano.2013.274