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Calibration-Free Measurement of the Phonon Temperature around a Single Emitter


​​​​​​​​​​​​​​​​​​​​​​​​​​Semiconductor quantum dots are essential components in emerging quantum technologies, including quantum computing, communication, and sensing. However, their properties are highly sensitive to their local environment, particularly the temperature of the surrounding crystal lattice. Traditional temperature measurements provide only bulk or macroscopic readings, failing to capture the local temperature at the nanoscale—where the quantum emitter resides.

Published on 3 April 2026

Researchers from CEA-IRIG/PHELIQS, in collaboration with Institut Néel-CNRS, have introduced a calibration-free method to measure the absolute temperature from the Bose-Einstein distribution of acoustic phonons around a single quantum emitter. The approach relies on analyzing the phonon sidebands in the emitter's photoluminescence spectrum, offering a direct probe of the temperature of the environment of a quantum dot emitter at the nanoscale.

Our method exploits a fundamental interaction between the quantum emitter and its surroundings. When an emitter (like a quantum dot) absorbs or emits light, it also interacts with phonons—vibrations in the crystal lattice that carry heat. These interactions create distinctive features in the light emitted by the quantum dot:

  • A sharp peak called the zero-phonon line (ZPL), representing light emitted without phonon interaction.
  • Broader "wings" on either side, called phonon sidebands, which result from photon emission processes that are mediated by the simultaneous creation (Stokes process) or absorption (anti-Stokes process) of a phonon.


At low temperatures, the anti-Stokes sideband (higher energy) is very weak because there are few phonons to absorb, while at higher temperatures, it grows stronger.  We show that the ratio of the Stokes to anti-Stokes intensities directly encodes the local temperature. The plot of the logarithm of this ratio against the energy shift from the ZPL is a straight line whose slope gives the temperature without any calibration.



Figure : a) Emission spectrum (QD); b) Local temperature obtained from the ratio of the Stokes to anti-Stokes intensities; c) SEM image of a  CdSe quantum dot (QD) in a ZnSe nanowire; d) Laser excitation leading to the heating of the QD; e)Phonon temperature versus cryostat temperature at an excitation power of 21 µW.

The method was validated across a wide temperature range (6–100 K) using a CdSe quantum dot in a ZnSe nanowire. At 6 K, laser excitation raised the local temperature to 55 K due to the nanowire's poor thermal conductivity. As the cryostat temperature increased, the local temperature neared the bulk value, indicating improved thermal equilibrium. Higher laser power caused significant local heating, highlighting the need to control excitation conditions. The approach was also successfully applied to InAs/GaAs quantum dots and WSe₂ emitters, demonstrating its broad applicability.

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