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Publications of the team in 2013

Published on 14 December 2018

Microcavity controlled coupling of excitonic qubits
Albert F, Sivalertporn K, Kasprzak J, Strauss M, Schneider C, Hofling S, Kamp M, Forchel A, Reitzenstein S, Muljarov EA, et al.
Nature Communications 4 (2013) 1747
http://dx.doi.org/10.1038/ncomms2764

Tunable quantum dot parametric source
Andronico A, Favero I, Ducci S, Gerard J-M and Leo G
Optics Express 21 (2013) 22367-22373
http://dx.doi.org/10.1364/OE.21.022367

Optical properties of single ZnTe nanowires grown at low temperature
Artioli A, Rueda-Fonseca P, Stepanov P, Bellet-Amalric E, Den Hertog M, Bougerol C, Genuist Y, Donatini F, Andre R, Nogues G, et al.
Applied Physics Letters 103 (2013) 222106
http://dx.doi.org/10.1063/1.4832055

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design
Beeler M, Bougerol C, Bellet-Amalric E and Monroy E
Applied Physics Letters 103 (2013) 091108
http://dx.doi.org/10.1063/1.4819950

III-nitride semiconductors for intersubband optoelectronics: a review
Beeler M, Trichas E and Monroy E
Semiconductor Science and Technology 28 (2013) 074022
http://dx.doi.org/10.1088/0268-1242/28/7/074022

Nature of the ZnSe/GaAs interface investigated by atom probe tomography
Benallali H, Hoummada K, Descoins M, Rueda-Fonseca P, Gerard L, Bellet-Amalric E, Tatarenko S, Kheng K and Mangelinck D
Scripta Materialia 69 (2013) 505-508
http://dx.doi.org/10.1016/j.scriptamat.2013.05.041

Imaging of photonic modes in an AlN-based photonic crystal probed by an ultra-violet internal light source
Brimont C, Guillet T, Rousset S, Neel D, Checoury X, David S, Boucaud P, Sam-Giao D, Gayral B, Rashid MJ, et al.
Optics Letters 38 (2013) 5059-5062
http://dx.doi.org/10.1364/ol.38.005059

Harnessing Light with Photonic Nanowires: Fundamentals and Applications to Quantum Optics
Claudon J, Gregersen N, Lalanne P and Gerard J-M
Chemphyschem 14 (2013) 2393-2402
http://dx.doi.org/10.1002/cphc.201300033

Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes
Cros A, Mata R, Hestroffer K and Daudin B
Applied Physics Letters 102 (2013) 143109
http://dx.doi.org/10.1063/1.4801779

Splitting of the Surface Phonon Modes in Wurtzite Nanowires
Cros A, Wang J, Demangeot F, Pechou R and Daudin B
Japanese Journal of Applied Physics 52 (2013)
http://dx.doi.org/10.7567/jjap.52.08jl01

All-dielectric GaN microcavity: Strong coupling and lasing at room temperature
Daskalakis KS, Eldridge PS, Christmann G, Trichas E, Murray R, Iliopoulos E, Monroy E, Pelekanos NT, Baumberg JJ and Savvidis PG
Applied Physics Letters 102 (2013) 101113
http://dx.doi.org/10.1063/1.4795019

Ultrafast quantum nondemolition measurements based on a diamond-shaped artificial atom
Diniz I, Dumur E, Buisson O and Auffeves A
Physical Review A 87 (2013) 033837
http://dx.doi.org/10.1103/PhysRevA.87.033837

Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers
Eymery J, Chen X, Durand C, Kolb M and Richter G
Comptes Rendus Physique 14 (2013) 221-227
http://dx.doi.org/10.1016/j.crhy.2012.10.009

Magnetic field induced nutation of exciton-polariton polarization in (Cd,Zn)Te crystals
Godde T, Glazov MM, Akimov IA, Yakovlev DR, Mariette H and Bayer M
Physical Review B 88 (2013) 155203
http://dx.doi.org/10.1103/PhysRevB.88.155203

Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors
Gonzalez-Posada F, Songmuang R, Den Hertog M and Monroy E
Applied Physics Letters 102 (2013) 213113
http://dx.doi.org/10.1063/1.4808017

Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells
Gross E, Nevet A, Pesach A, Monroy E, Schacham SE, Orenstein M, Segev M and Bahir G
Optics Express 21 (2013) 3800-3808
http://dx.doi.org/10.1364/OE.21.003800

A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer
Hestroffer K and Daudin B
Physica Status Solidi-Rapid Research Letters 7 (2013) 835-839
http://dx.doi.org/10.1002/pssr.201307255

A geometrical model for the description of the AlN shell morphology in GaN-AlN core-shell nanowires
Hestroffer K and Daudin B
Journal of Applied Physics 114 (2013) 244305
http://dx.doi.org/10.1063/1.4854495

Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
Hocevar M, Le Thuy Thanh G, Songmuang R, den Hertog M, Besombes L, Bleuse J, Niquet Y-M and Pelekanos NT
Applied Physics Letters 102 (2013) 191103
http://dx.doi.org/10.1063/1.4803685

Spin dynamics of a Mn atom in a semiconductor quantum dot under resonant optical excitation
Jamet S, Boukari H and Besombes L
Physical Review B 87 (2013) 245306
http://dx.doi.org/10.1103/PhysRevB.87.245306

Vectorial nonlinear coherent response of a strongly confined exciton-biexciton system
Kasprzak J, Portolan S, Rastelli A, Wang L, Plumhof JD, Schmidt OG and Langbein W
New Journal of Physics 15 (2013) 055006
http://dx.doi.org/10.1088/1367-2630/15/5/055006

Coherence dynamics and quantum-to-classical crossover in an exciton-cavity system in the quantum strong coupling regime
Kasprzak J, Sivalertporn K, Albert F, Schneider C, Hoefling S, Kamp M, Forchel A, Reitzenstein S, Muljarov EA and Langbein W
New Journal of Physics 15 (2013) 045013
http://dx.doi.org/10.1088/1367-2630/15/4/045013

Ge1-xMnx heteroepitaxial quantum dots: Growth, morphology, and magnetism
Kassim J, Nolph C, Jamet M, Reinke P and Floro J
Journal of Applied Physics 113 (2013) 073910
http://dx.doi.org/10.1063/1.4792221

Excited exciton and biexciton localised states in a single quantum ring
Kim HD, Kyhm K, Taylor RA, Nicolet AAL, Potemski M, Nogues G, Je KC, Lee EH and Song JD
Applied Physics Letters 103 (2013) 173106
http://dx.doi.org/10.1063/1.4826479

Asymmetry of localised states in a single quantum ring: Polarization dependence of excitons and biexcitons
Kim HD, Kyhm K, Taylor RA, Nogues G, Je KC, Lee EH and Song JD
Applied Physics Letters 102 (2013) 033112
http://dx.doi.org/10.1063/1.4789519

Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission
Ko S-M, Kwack H-S, Park C, Yoo Y-S, Kwon S-Y, Kim HJ, Yoon E, Dang LS and Cho Y-H
Applied Physics Letters 103 (2013) 222104
http://dx.doi.org/10.1063/1.4833917

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
Le Thuy TG, Bougerol C, Mariette H and Songmuang R
Journal of Crystal Growth 364 (2013) 118-122
http://dx.doi.org/10.1016/j.jcrysgro.2012.11.032

Strain assisted inter-diffusion in GaN/AlN quantum dots
Leclere C, Fellmann V, Bougerol C, Cooper D, Gayral B, Proietti MG, Renevier H and Daudin B
Journal of Applied Physics 113 (2013) 034311
http://dx.doi.org/10.1063/1.4775587

Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering
Lorenz K, Nogales E, Miranda SMC, Franco N, Mendez B, Alves E, Tourbot G and Daudin B
Acta Materialia 61 (2013) 3278-3284
http://dx.doi.org/10.1016/j.actamat.2013.02.016

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
Machhadani H, Beeler M, Sakr S, Warde E, Kotsar Y, Tchernycheva M, Chauvat MP, Ruterana P, Nataf G, De Mierry P, et al.
Journal of Applied Physics 113 (2013) 143109
http://dx.doi.org/10.1063/1.4801528

Hyperbolic spin vortices and textures in exciton-polariton condensates
Manni F, Leger Y, Rubo YG, Andre R and Deveaud B
Nature Communications 4 (2013) 2590
http://dx.doi.org/10.1038/ncomms3590

Spontaneous self-ordered states of vortex-antivortex pairs in a polariton condensate
Manni F, Liew TCH, Lagoudakis KG, Ouellet-Plamondon C, Andre R, Savona V and Deveaud B
Physical Review B 88 (2013) 201303
http://dx.doi.org/10.1103/PhysRevB.88.201303

Microring Diode Laser for THz Generation
Mariani S, Andronico A, Favero I, Ducci S, Todorov Y, Sirtori C, Kamp M, Munsch M, Claudon J, Gerard J-M, et al.
Ieee Transactions on Terahertz Science and Technology 3 (2013) 472-478
http://dx.doi.org/10.1109/tthz.2013.2255048

Cooperativity of a few quantum emitters in a single-mode cavity
Mascarenhas E, Gerace D, Santos MF and Auffeves A
Physical Review A 88 (2013) 063825
http://dx.doi.org/10.1103/PhysRevA.88.063825

Time-Dependent Relaxation of Strained Silicon-on-Insulator Lines Using a Partially Coherent X-Ray Nanobeam
Mastropietro F, Eymery J, Carbone G, Baudot S, Andrieu F and Favre-Nicolin V
Physical Review Letters 111 (2013) 215502
http://dx.doi.org/10.1103/PhysRevLett.111.215502

Waveguide saturable absorbers at 1.55 mu m based on intraband transitions in GaN/AlN QDs
Monteagudo-Lerma L, Valdueza-Felip S, Naranjo FB, Corredera P, Rapenne L, Sarigiannidou E, Strasser G, Monroy E and Gonzalez-Herraez M
Optics Express 21 (2013) 27578-27586
http://dx.doi.org/10.1364/oe.21.027578

Two-step method for the deposition of AlN by radio frequency sputtering
Monteagudo-Lerma L, Valdueza-Felip S, Nunez-Cascajeroa A, Gonzalez-Herraez M, Monroy E and Naranjo FB
Thin Solid Films 545 (2013) 149-153
http://dx.doi.org/10.1016/j.tsf.2013.07.062

Dielectric GaAs Antenna Ensuring an Efficient Broadband Coupling between an InAs Quantum Dot and a Gaussian Optical Beam
Munsch M, Malik NS, Dupuy E, Delga A, Bleuse J, Gerard J-M, Claudon J, Gregersen N and Mork J
Physical Review Letters 110 (2013) 177402
http://dx.doi.org/10.1103/PhysRevLett.110.177402

Determination of the biaxial stress in strained silicon nano-stripes through polarized oblique incidence Raman spectroscopy
Ndong G, Picardi G, Licitra C, Rouchon D, Eymery J and Ossikovski R
Journal of Applied Physics 114 (2013) 164309
http://dx.doi.org/10.1063/1.4826907

Fabrication and tuning of plasmonic optical nanoantennas around droplet epitaxy quantum dots by cathodoluminescence
Nogues G, Merotto Q, Bachelier G, Lee EH and Song JD
Applied Physics Letters 102 (2013) 231112
http://dx.doi.org/10.1063/1.4809831

Structural and optical properties of AlxGa1-xN nanowires
Pierret A, Bougerol C, den Hertog M, Gayral B, Kociak M, Renevier H and Daudin B
Physica Status Solidi-Rapid Research Letters 7 (2013) 868-873
http://dx.doi.org/10.1002/pssr.201308009

Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence
Pierret A, Bougerol C, Gayral B, Kociak M and Daudin B
Nanotechnology 24 (2013) 305703
http://dx.doi.org/10.1088/0957-4484/24/30/305703

Growth, structural and optical properties of AlGaN nanowires in the whole composition range
Pierret A, Bougerol C, Murcia-Mascaros S, Cros A, Renevier H, Gayral B and Daudin B
Nanotechnology 24 (2013) 115704
http://dx.doi.org/10.1088/0957-4484/24/11/115704

Optical properties of individual GaAs quantum dots embedded into AlGaAs nanowires
Platonov AV, Kochereshko VP, Kats VN, Tsyrlin GE, Buravlev AD, Samsonenko YB, Besombes L and Mariette H
Journal of Surface Investigation 7 (2013) 622-625
http://dx.doi.org/10.1134/s1027451013040149

Structure and magnetism in strained Ge1-x-ySnxMny films grown on Ge(001) by low temperature molecular beam epitaxy
Prestat E, Barski A, Bellet-Amalric E, Jacquot JF, Morel R, Tainoff D, Jain A, Porret C, Bayle-Guillemaud P and Jamet M
Applied Physics Letters 103 (2013) 012403
http://dx.doi.org/10.1063/1.4813117

Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures
Redondo-Cubero A, Lorenz K, Wendler E, Carvalho D, Ben T, Morales FM, Garcia R, Fellmann V and Daudin B
Nanotechnology 24 (2013) 505717
http://dx.doi.org/10.1088/0957-4484/24/50/505717

GaN/AlGaN waveguide quantum cascade photodetectors at lambda approximate to 1.55 mu m with enhanced responsivity and similar to 40 GHz frequency bandwidth
Sakr S, Crozat P, Gacemi D, Kotsar Y, Pesach A, Quach P, Isac N, Tchernycheva M, Vivien L, Bahir G, et al.
Applied Physics Letters 102 (2013) 011135
http://dx.doi.org/10.1063/1.4775374

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
Salomon D, Dussaigne A, Lafossas M, Durand C, Bougerol C, Ferret P and Eymery J
Nanoscale Research Letters 8 (2013) 61
http://dx.doi.org/10.1186/1556-276x-8-61

Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires
Sam-Giao D, Mata R, Tourbot G, Renard J, Wysmolek A, Daudin B and Gayral B
Journal of Applied Physics 113 (2013) 043102
http://dx.doi.org/10.1063/1.4775492

Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires
Tchoulfian P, Donatini F, Levy F, Amstatt B, Dussaigne A, Ferret P, Bustarret E and Pernot J
Applied Physics Letters 103 (2013) 202101
http://dx.doi.org/10.1063/1.4829857

High conductivity in Si-doped GaN wires
Tchoulfian P, Donatini F, Levy F, Amstatt B, Ferret P and Pernot J
Applied Physics Letters 102 (2013) 122116
http://dx.doi.org/10.1063/1.4799167

InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface
Teubert J, Koslowski S, Lippert S, Schaefer M, Wallys J, Dimitrakopulos G, Kehagias T, Komninou P, Das A, Monroy E, et al.
Journal of Applied Physics 114 (2013) 074313
http://dx.doi.org/10.1063/1.4818624

Non-exponential spontaneous emission dynamics for emitters in a time-dependent optical cavity
Thyrrestrup H, Hartsuiker A, Gerard J-M and Vos WL
Optics Express 21 (2013) 23130-23144
http://dx.doi.org/10.1364/oe.21.023130

Long-range correlations in a 97% excitonic one-dimensional polariton condensate
Trichet A, Durupt E, Medard F, Datta S, Minguzzi A and Richard M
Physical Review B 88 (2013) 121407
http://dx.doi.org/10.1103/PhysRevB.88.121407

Size and shape effects in the Raman scattering by single GaN nanowires
Wang J, Demangeot F, Pechou R, Bayon C, Mlayah A and Daudin B
Journal of Applied Physics 114 (2013) 223506
http://dx.doi.org/10.1063/1.4839975

All-optical switching of a microcavity repeated at terahertz rates
Yuce E, Ctistis G, Claudon J, Dupuy E, Buijs RD, de Ronde B, Mosk AP, Gerard J-M and Vos WL
Optics Letters 38 (2013) 374-376
http://dx.doi.org/10.1364/OL.38.000374

Nano-Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect
Zhou YS, Hinchet R, Yang Y, Ardila G, Songmuang R, Zhang F, Zhang Y, Han WH, Pradel K, Montes L, et al.
Advanced Materials 25 (2013) 883-888
http://dx.doi.org/10.1002/adma.201203263