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Xavier Jehl

Xavier JEHL
Phone: 04 38 78 90 45
Fax: 04 38 78 50 96


Staff researcher

Sujets de recherche

mesoscopic physics: shot noise in hybrid systems (up to 2000). Since 2000 electrical quantum transport in silicon nanodevices: Coulomb blockade, transport through a single dopant, ionization energy of a single dopant, Si-RF-SET, valley-orbit splitting of a single dopant atom, adiabatic and non-adiabatic electron pumps.


From 2008 to 2011, E.U. FP7 project "AFSiD" (www.afsid.eu): development and measurement of ultra-scaled silicon devices for new functionalities: Coulomb blockade and single dopant transistors.

From 2007 to 2010, in charge of an ANR project aimed at developping a new silicon CMOS electron pump.

In 2002 I joined the mesoscopic physics group of SPSMS at CEA-Grenoble.

Postdoc (2000-2001): at NIST in Boulder, Colorado, USA, worked on a new capacitance standard based on counting electrons.

PhD (1997-1999): set-up of a new shot noise measurement apparatus based on a DC squid and application to measurement of shot noise doubling in Normal/Superconductor junctions.

Publications scientifiques

  • E. Dupont-Ferrier, B. Roche, B. Voisin, X. Jehl, R. Wacquez, M. Vinet, M. Sanquer, S. De Franceschi, Coupling and coherent electrical control of two dopants in a silicon nanowire,accepted for publication in Phys. Rev. Lett. 2013, arXiv:1207.1884.
  • B. Roche, R.-P. Riwar, B. Voisin, E. Dupont-Ferrier, R. Wacquez, M. Vinet, M. Sanquer, J. Splettstoesser and X. Jehl, A two-atom electron pump, accepted for publication in Nature Communications, arXiv:1212.1142.
  • B. Roche, E. Dupont-Ferrier, B. Voisin, M. Cobian, X. Jehl, R. Wacquez,M. Vinet, Y.-M. Niquet, and M. Sanquer, Detection of a Large Valley-Orbit Splitting in Silicon with Two-Donor Spectroscopy, Phys. Rev. Lett. 108, 206812 (2012).
  • B. Roche, B. Voisin, X. Jehl, R. Wacquez, M. Sanquer, M. Vinet, V. Deshpande, B. Previtali, A tunable, dual mode field-effect or single electron transistor, Appl. Phys. Lett. 100, 032107, 2012.
  • E. Prati, M. De Michielis, M. Belli, S. Cocco, M. Fanciulli, D. Kotekar-Patil, M. Ruoff, D.P. Kern, D.A. Wharam, J. Jerduijn, G. C. Tettamanzi, S. Rogge, B. Roche, R. Wacquez, X. Jehl, M. Vinet and M. Sanquer, Few electron limit of n-type metal oxide semiconductor single electron transistors, Nanotechnology 23,  215204 (2012).
  • B. J. Villis, A. O. Orlov, X. Jehl, G. L. Snider, P. Fay, M. Sanquer, Defect detection in nano-scale transistors based on radio-frequency reflectometry, Appl. Phys. Lett. 99, 15, 2011
  • S. Pauliac-Vaujour, R. Wacquez, C. Vizioz, T. Chevolleau, M .Pierre, B. Previtali, C. Comboroure, N. Bove, B. Roche, M. Vinet, X. Jehl, M. Sanquer, P. Sixt, Patterning Strategy for Monoelectronic Device Platform in a Complementary Metal Oxide Semiconductor Technology, Japanese J. Appl. Phys., Volume: 50, Issue: 6, Juin 2011
  • M. Pierre and B. Roche and R. Wacquez and X. Jehl and M. Sanquer and M. Vinet, Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire, J. Appl. Phys. 109, 084346 (2011)
  • V. N. Golovach, X. Jehl, M. Houzet, M. Pierre, B. Roche, M. Sanquer, and L. I. Glazman, Single-dopant resonance in a single-electron transistor,  Phys. Rev. B83, 075401 (2011).
  • M. Pierre, R. Wacquez, X. Jehl, M. Sanquer, M. Vinet and O. Cueto, Single donor ionization energies in a nanoscale CMOS channel, Nature Nanotechnology, 5, 133 (2010).
  •  Hubert C. George, Mathieu Pierre, Xavier Jehl, Alexei O. Orlov, Marc Sanquer, and Gregory L. Snider, Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization, Appl. Phys. Lett. 96, 042114 (2010).
  •  M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, and M. Fanciulli, Compact silicon double and triple dots realized with only two gates, Appl. Phys. Lett. 95, 242107 (2009) .
  •  M. Pierre, M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus, Background charge and quantum effects in quantum dots spectroscopy, Eur. Phys. J. B 70, 475-481 (2009).
  • M. Hofheinz, X. Jehl, M. Sanquer, R. Cerutti, A. Cros, P. Coronel, H. Brut and T. Skotnicki, Measurement of capacitances in multi-gate transistors by Coulomb blockade spectroscopy, to appear in IEEE transactions on Nanotechnology 7, 74-78 (2008).
  • M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus, Capacitance enhancement in Coulomb blockade tunnel barriers, Phys. Rev. B 75, 235301 (2007).
  • M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus, Capacitance measurements in nanometric silicon devices using Coulomb blockade, Solid State Electronics 51, 560-564 (2007).
  • M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus, Individual charge traps in silicon nanowires, Eur. Phys. J. B 54, 299-307 (2006).
  • M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus, A simple and controlled single electron transistor based on doping modulation in silicon nanowires, Appl. Phys. Lett. 89, 143504 (2006).
  • X. Jehl, M. Hofheinz, M. Boehm, M. Sanquer, G. Molas, M. Vinet and S. Deleonibus, Peak spacing statistics in silicon single-electron transistors: Size and gate oxide thickness dependence, to appear in PhysicaE, 2006.
  • M. Boehm, M. Hofheinz, X. Jehl, M. Sanquer, M. Vinet, B. Previtali, D. Mariolle and S. Deleonibus, Size scaling of the addition spectra in silicon quantum dots, Phys. Rev. B 71, 033305 (2005).
  • Gabriel Molas, Xavier Jehl, Marc Sanquer, Barbara De Salvo, Dominique Lafond, andSimon Deleonibus, Manipulation of Periodic Coulomb Blockade Oscillations in Ultra-Scaled Memories by Single Electron Charging of Silicon Nanocrystal Floating Gates, IEEE trans. on Nanotechnology 4, 374 (2005).
  • F. Boeuf, X. Jehl, M. Sanquer and T. Skotnicki, Experimental study of transport in nanoscale planar MOSFETs near the ballistic limit, IEEE trans. on Nanotechnology 3, 105 (2004).
  • M. Sanquer, X. Jehl, M. Specht, G. Bertrand, G. Guégan and S. Deleonibus, High resolution transport spectroscopy in ultimate MOSFETs at very low temperature, Solid State Electronics 48, 2213 (2004).
  • Frédéric Boeuf, Xavier Jehl, Marc Sanquer, and Thomas Skotnicki, Controlled Single-Electron Effects in Nonoverlapped Ultra-Short Silicon Field Effect Transistors, IEEE trans. on Nanotechnology 2, 144 (2003).
  • G. Bertrand, S. Deleonibus, B. Previtali, G. Guégan, X. Jehl, M. Sanquer and F. Balestra, Towards the limits of conventional MOSFETs, Solid State Electronics 48, 505 (2004).
  • X. Jehl, M. Sanquer, G. Bertrand, G. Guégan, S. Deleonibus and D. Fraboulet, Silicon single-electron transistors with SOI and MOSFET structures: the role of access resistances, IEEE trans. on Nanotechnology 2, 308 (2003).
  • Xavier Jehl, Mark W. Keller, R. L. Kautz, J. Aumentado, and John M. Martinis, Counting errors in a voltage-biased electron pump, Phys. Rev. B 67, 165331 (2003).
  • X. Jehl and M. Sanquer, Shot-noise measurements in normal-metal–superconductor junctions and the semiclassical theory, Phys. Rev. B 63, 052511 (2001).
  • X. Jehl, M. Sanquer, R. Calemczuk and D. Mailly,Detection of doubled shot noise in short normal-metal/superconductor junctions, Nature 405, 50 (2000).
  • X. Jehl, P. Payet-Burin, C. Baraduc, R. Calemczuk and M. Sanquer, Andreev reflection enhanced shot noise in mesoscopic SNS junctions, Phys. Rev. Lett. 83, 1660 (1999)
  • X. Jehl, P. Payet-Burin, C. Baraduc, R. Calemczuk and M. Sanquer,Superconducting quantum interference device based resistance bridge for shot noise measurement on low impedance samples, Review of Scientific instruments 70, 2711 (1999)
  • X. Jehl, D. Braithwaite, P. Payet-Burin and R. Calemczuk, Step structure observed in the superconducting transition of a bulk Pb wire with very low current densities, Journal of Low Temperature Physics 113, 31 (1998)

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