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Publications de l'équipe en 2016

Publié le 12 décembre 2018

Ge doping of GaN beyond the Mott transition
Ajay A, Schoermann J, Jimenez-Rodriguez M, Lim CB, Walther F, Rohnke M, Mouton I, Amichi L, Bougerol C, Den Hertog M, et al.
Journal of Physics D-Applied Physics 49 (2016) 445301
http://dx.doi.org/10.1088/0022-3727/49/44/445301
HAL <hal-01638851>

Unraveling the strain state of GaN down to single nanowires
Auzelle T, Biquard X, Bellet-Amalric E, Fang Z, Roussel H, Cros A and Daudin B
Journal of Applied Physics 120 (2016) 225701
http://dx.doi.org/10.1063/1.4971967

GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures
Avit G, Andre Y, Bougerol C, Castelluci D, Dussaigne A, Ferret P, Gaugiran S, Gayral B, Gil E, Lee Y, et al.
Crystal Growth & Design 16 (2016) 2509-2513
http://dx.doi.org/10.1021/acs.cgd.5b01244

Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact
Babichev AV, Zhang H, Guan N, Egorov AY, Julien FH, Messanvi A, Durand C, Eymery J and Tchernycheva M
Semiconductors 50 (2016) 1097-1101
http://dx.doi.org/10.1134/s106378261608008x

Quantum Dot-Like Behavior of Compositional Fluctuations in AIGaN Nanowires
Belloeil M, Gayral B and Daudin B
Nano Letters 16 (2016) 960-966
http://dx.doi.org/10.1021/acs.nanolett.5b03904

Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography
Bonef B, Lopez-Haro M, Amichi L, Beeler M, Grenier A, Robin E, Jouneau P-H, Mollard N, Mouton I, Monroy E, et al.
Nanoscale Research Letters 11 (2016) 461
http://dx.doi.org/10.1186/s11671-016-1668-2

Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field
Budagosky JA, Garro N, Cros A, Garcia-Cristobal A, Founta S and Daudin B
Materials Science in Semiconductor Processing 49 (2016) 76-80
http://dx.doi.org/10.1016/j.mssp.2016.03.022

Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric field
Budagosky JA, Garro N, Cros A, Garcia-Cristobal A, Founta S and Daudin B
Materials Science in Semiconductor Processing 55 (2016) 90-94
http://dx.doi.org/10.1016/j.mssp.2016.09.027

A fiber-coupled quantum-dot on a photonic tip
Cadeddu D, Teissier J, Braakman FR, Gregersen N, Stepanov P, Gerard J-M, Claudon J, Warburton RJ, Poggio M and Munsch M
Applied Physics Letters 108 (2016) 011112
http://dx.doi.org/10.1063/1.4939264

Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction
Carvalho D, Mueller-Caspary K, Schowalter M, Grieb T, Mehrtens T, Rosenauer A, Ben T, Garcia R, Redondo-Cubero A, Lorenz K, et al.
Scientific Reports 6 (2016) 28459
http://dx.doi.org/10.1038/srep28459

Multi-wave coherent control of a solid-state single emitter
Fras F, Mermillod Q, Nogues G, Hoarau C, Schneider C, Kamp M, Hoefling S, Langbein W and Kasprzak J
Nature Photonics 10 (2016) 155-158
http://dx.doi.org/10.1038/nphoton.2016.2

Coherent manipulation of a solid-state artificial atom with few photons
Giesz V, Somaschi N, Hornecker G, Grange T, Reznychenko B, De Santis L, Demory J, Gomez C, Sagnes I, Lemaitre A, et al.
Nature Communications 7 (2016) 11986
http://dx.doi.org/10.1038/ncomms11986

A broadband tapered nanocavity for efficient nonclassical light emission
Gregersen N, McCutcheon DPS, Mork J, Gerard J-M and Claudon J
Optics Express 24 (2016) 20904-20924
http://dx.doi.org/10.1364/oe.24.020904

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors
Guan N, Dai X, Messanvi A, Zhang H, Yan J, Gautier E, Bougerol C, Julien FH, Durand C, Eymery J, et al.
ACS Photonics 3 (2016) 597-603
http://dx.doi.org/10.1021/acsphotonics.5b00696

Impact of Phonons on Dephasing of Individual Excitons in Deterministic Quantum Dot Microlenses
Jakubczyk T, Delmonte V, Fischbach S, Wigger D, Reiter DE, Mermillod Q, Schnauber P, Kaganskiy A, Schulze J-H, Strittmatter A, et al.
ACS Photonics 3 (2016) 2461-2466
http://dx.doi.org/10.1021/acsphotonics.6b00707

Radiatively Limited Dephasing and Exciton Dynamics in MoSe2 Monolayers Revealed with Four-Wave Mixing Microscopy
Jakubczyk T, Delmonte V, Koperski M, Nogajewski K, Faugeras C, Langbein W, Potemski M and Kasprzak J
Nano Letters 16 (2016) 5333-5339
http://dx.doi.org/10.1021/acs.nanolett.6b01060

Deterministic radiative coupling between plasmonic nanoantennas and semiconducting nanowire quantum dots
Jeannin M, Rueda-Fonseca P, Bellet-Amalric E, Kheng K and Nogues G
Nanotechnology 27 (2016) 185201
http://dx.doi.org/10.1088/0957-4484/27/18/185201
HAL <hal-01297587>

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors
Joglekar S, Azize M, Beeler M, Monroy E and Palacios T
Applied Physics Letters 109 (2016) 041602
http://dx.doi.org/10.1063/1.4959831

High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis
Kaminska A, Jankowski D, Strak P, Korona KP, Beeler M, Sakowski K, Grzanka E, Borysiuk J, Sobczak K, Monroy E, et al.
Journal of Applied Physics 120 (2016) 095705
http://dx.doi.org/10.1063/1.4962282

Correlation of optical and structural properties of GaN/AIN multi-quantum wells-Ab initio and experimental study
Kaminska A, Strak P, Borysiuk J, Sobczak K, Domagala JZ, Beeler M, Grzanka E, Sakowski K, Krukowski S and Monroy E
Journal of Applied Physics 119 (2016) 015703
http://dx.doi.org/10.1063/1.4939595

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
Laehnemann J, Den Hertog M, Hille P, de la Mata M, Fournier T, Schoermann J, Arbiol J, Eickhoff M and Monroy E
Nano Letters 16 (2016) 3260-3267
http://dx.doi.org/10.1021/acs.nanolett.6b00806

Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures
Lim CB, Ajay A, Bougerol C, Laehnemann J, Donatini F, Schoermann J, Bellet-Amalric E, Browne DA, Jimenez-Rodriguez M and Monroy E
Nanotechnology 27 (2016) 145201
http://dx.doi.org/10.1088/0957-4484/27/14/145201
HAL <hal-01677524>

Ultrafast dynamical response of the lower exciton-polariton branch in CdZnTe
Lohrenz J, Melzer S, Ruppert C, Akimov IA, Mariette H, Reichelt M, Trautmann A, Meier T and Betz M
Physical Review B 93 (2016) 075201
http://dx.doi.org/10.1103/PhysRevB.93.075201

Scalable performance in solid-state single-photon sources
Loredo JC, Zakaria NA, Somaschi N, Anton C, de Santis L, Giesz V, Grange T, Broome MA, Gazzano O, Coppola G, et al.
Optica 3 (2016) 433-440
http://dx.doi.org/10.1364/optica.3.000433

PyNX.Ptycho: a computing library for X-ray coherent diffraction imaging of nanostructures
Mandula O, Aizarna ME, Eymery J, Burghammer M and Favre-Nicolin V
Journal of Applied Crystallography 49 (2016) 1842-1848
http://dx.doi.org/10.1107/s1600576716012279

Harvesting, Coupling, and Control of Single-Exciton Coherences in Photonic Waveguide Antennas
Mermillod Q, Jakubczyk T, Delmonte V, Delga A, Peinke E, Gerard J-M, Claudon J and Kasprzak J
Physical Review Letters 116 (2016) 163903
http://dx.doi.org/10.1103/PhysRevLett.116.163903

Dynamics of excitons in individual InAs quantum dots revealed in four-wave mixing spectroscopy
Mermillod Q, Wigger D, Delmonte V, Reiter DE, Schneider C, Kamp M, Hoefling S, Langbein W, Kuhn T, Nogues G, et al.
Optica 3 (2016) 377-384
http://dx.doi.org/10.1364/optica.3.000377

Lifetime Measurements Well below the Optical Diffraction Limit
Meuret S, Tizei LHG, Auzelle T, Songmuang R, Daudin B, Gayral B and Kociak M
ACS Photonics 3 (2016) 1157-1163
http://dx.doi.org/10.1021/acsphotonics.6b00212

Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy
Minj A, Cros A, Auzelle T, Pernot J and Daudin B
Nanotechnology 27 (2016) 385202
http://dx.doi.org/10.1088/0957-4484/27/38/385202

III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 mu m
Monteagudo-Lerma L, Naranjo FB, Valdueza-Felip S, Jimenez-Rodriguez M, Monroy E, Postigo PA, Corredera P and Gonzalez-Herraez M
Physica Status Solidi a-Applications and Materials Science 213 (2016) 1269-1275
http://dx.doi.org/10.1002/pssa.201532810

Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer
Monteagudo-Lerma L, Valdueza-Felip S, Nunez-Cascajero A, Ruiz A, Gonzalez-Herraez M, Monroy E and Naranjo FB
Journal of Crystal Growth 434 (2016) 13-18
http://dx.doi.org/10.1016/j.jcrysgro.2015.10.016

Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
Moratis K, Tan SL, Germanis S, Katsidis C, Androulidaki M, Tsagaraki K, Hatzopoulos Z, Donatini F, Cibert J, Niquet YM, et al.
Nanoscale Research Letters 11 (2016) 176
http://dx.doi.org/10.1186/s11671-016-1384-y

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness
Mukhtarova A, Valdueza-Felip S, Redaelli L, Durand C, Bougerol C, Monroy E and Eymery J
Applied Physics Letters 108 (2016) 161907
http://dx.doi.org/10.1063/1.4947445
HAL <hal-01677519>

Design of broadband high-efficiency superconducting-nanowire single photon detectors
Redaelli L, Bulgarini G, Dobrovolskiy S, Dorenbos SN, Zwiller V, Monroy E and Gerard J-M
Superconductor Science and Technology 29 (2016) 065016
http://dx.doi.org/10.1088/0953-2048/29/6/065016

Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks
Roland I, Gromovyi M, Zeng Y, El Kurdi M, Sauvage S, Brimont C, Guillet T, Gayral B, Semond F, Duboz J-Y, et al.
Scientific Reports 6 (2016) 34191
http://dx.doi.org/10.1038/srep34191
HAL <hal-01636574>

Near-infrared III-nitride-on-silicon nanophotonic platform with microdisk resonators
Roland I, Zeng Y, Checoury X, El Kurdi M, Sauvage S, Brimont C, Guillet T, Gayral B, Gromovyi M, Duboz JY, et al.
Optics Express 24 (2016) 9602-9610
http://dx.doi.org/10.1364/oe.24.009602

Phonon-plasmon coupling in Si doped GaN nanowires
Rozas-Jimenez E, Cros A, Murcia-Mascaros S, Fang Z and Daudin B
Materials Science in Semiconductor Processing 55 (2016) 63-66
http://dx.doi.org/10.1016/j.mssp.2016.02.017

Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy
Rueda-Fonseca P, Orru M, Bellet-Amalric E, Robin E, Den Hertog M, Genuist Y, Andre R, Tatarenko S and Cibert J
Journal of Applied Physics 119 (2016) 164303
http://dx.doi.org/10.1063/1.4947269

Quantitative Reconstructions of 3D Chemical Nanostructures in Nanowires
Rueda-Fonseca P, Robin E, Bellet-Amalric E, Lopez-Haro M, Den Hertog M, Genuist Y, Andre R, Artioli A, Tatarenko S, Ferrand D, et al.
Nano Letters 16 (2016) 1637-1642
http://dx.doi.org/10.1021/acs.nanolett.5b04489

Deep-UV nitride-on-silicon microdisk lasers
Selles J, Brimont C, Cassabois G, Valvin P, Guillet T, Roland I, Zeng Y, Checoury X, Boucaud P, Mexis M, et al.
Scientific Reports 6 (2016) 21650
http://dx.doi.org/10.1038/srep21650

III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet
Selles J, Crepel V, Roland I, El Kurdi M, Checoury X, Boucaud P, Mexis M, Leroux M, Damilano B, Rennesson S, et al.
Applied Physics Letters 109 (2016) 231101
http://dx.doi.org/10.1063/1.4971357

Near-optimal single-photon sources in the solid state
Somaschi N, Giesz V, De Santis L, Loredo JC, Almeida MP, Hornecker G, Portalupi SL, Grange T, Anton C, Demory J, et al.
Nature Photonics 10 (2016) 340-345
http://dx.doi.org/10.1038/nphoton.2016.23

Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core-Shell Nanowires on Silicon
Songmuang R, Le Thuy Thanh G, Bleuse J, Den Hertog M, Niquet YM, Dang LS and Mariette H
Nano Letters 16 (2016) 3426-3433
http://dx.doi.org/10.1021/acs.nanolett.5b03917

Large and Uniform Optical Emission Shifts in Quantum Dots Strained along Their Growth Axis
Stepanov P, Elzo-Aizarna M, Bleuse J, Malik NS, Cure Y, Gautier E, Favre-Nicolin V, Gerard J-M and Claudon J
Nano Letters 16 (2016) 3215-3220
http://dx.doi.org/10.1021/acs.nanolett.6b00678

High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnSe
St-Jean P, Ethier-Majcher G, Andre R and Francoeur S
Physical Review Letters 117 (2016) 167401
http://dx.doi.org/10.1103/PhysRevLett.117.167401

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect
Yuce E, Ctistis G, Claudon J, Gerard J-M and Vos WL
Optics Express 24 (2016) 239-253
http://dx.doi.org/10.1364/oe.24.000239

Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires
Zagonel LF, Tizei LHG, Vitiello GZ, Jacopin G, Rigutti L, Tchernycheva M, Julien FH, Songmuang R, Ostasevicius T, de la Pena F, et al.
Physical Review B 93 (2016) 205410
http://dx.doi.org/10.1103/PhysRevB.93.205410

Imaging of Photonic Crystal Localized Modes through Third-Harmonic Generation
Zeng Y, Roland I, Checoury X, Han Z, El Kurdi M, Sauvage S, Gayral B, Brimont C, Guillet T, Semond F, et al.
ACS Photonics 3 (2016) 1240-1247
http://dx.doi.org/10.1021/acsphotonics.6b00236

Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires
Zhang H, Dai X, Guan N, Messanvi A, Neplokh V, Piazza V, Vallo M, Bougerol C, Julien FH, Babichev A, et al.
ACS Applied Materials and Interfaces 8 (2016) 26198-26206
http://dx.doi.org/10.1021/acsami.6b06414

Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratio
Zhang X, Belloeil M, Jouneau P-H, Bougerol C, Gayral B and Daudin B
Materials Science in Semiconductor Processing 55 (2016) 79-84
http://dx.doi.org/10.1016/j.mssp.2016.03.006
HAL <hal-01677509>

Growth mechanism of InGaN nanoumbrellas
Zhang X, Haas B, Rouviere J-L, Robin E and Daudin B
Nanotechnology 27 (2016) 455603
http://dx.doi.org/10.1088/0957-4484/27/45/455603

InGaN nanowires with high InN molar fraction: growth, structural and optical properties
Zhang X, Lourenco-Martins H, Meuret S, Kociak M, Haas B, Rouviere J-L, Jouneau P-H, Bougerol C, Auzelle T, Jalabert D, et al.
Nanotechnology 27 (2016) 195704
http://dx.doi.org/10.1088/0957-4484/27/19/195704