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Publications de l'équipe en 2014

Publié le 12 décembre 2018

High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
Betz AC, Barraud S, Wilmart Q, Placais B, Jehl X, Sanquer M and Gonzalez-Zalba MF
Applied Physics Letters 104 (2014) 043106
http://dx.doi.org/10.1063/1.4863538

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy
Brun B, Martins F, Faniel S, Hackens B, Bachelier G, Cavanna A, Ulysse C, Ouerghi A, Gennser U, Mailly D, et al.
Nature Communications 5 (2014) 4290
http://dx.doi.org/10.1038/ncomms5290

Anomalous response of superconducting titanium nitride resonators to terahertz radiation
Bueno J, Coumou PCJJ, Zheng G, de Visser PJ, Klapwijk TM, Driessen EFC, Doyle S and Baselmans JJA
Applied Physics Letters 105 (2014) 192601
http://dx.doi.org/10.1063/1.4901536

Gas Immersion Laser Doping for superconducting nanodevices
Chiodi F, Grockowiak A, Duvauchelle JE, Fossard F, Lefloch F, Klein T, Marcenat C and Debarre D
Applied Surface Science 302 (2014) 209-212
http://dx.doi.org/10.1016/j.apsusc.2013.10.101

Vortex creep down to 0.3 K in superconducting Fe(Te,Se) single crystals
Klein T, Grasland H, Cercellier H, Toulemonde P and Marcenat C
Physical Review B 89 (2014) 014514
http://dx.doi.org/10.1103/PhysRevB.89.014514

Entropy of the quantum soliton lattice and multiple magnetization steps in BiCu2PO6
Kohama Y, Mochidzuki K, Terashima T, Miyata A, DeMuer A, Klein T, Marcenat C, Dun ZL, Zhou H, Li G, et al.
Physical Review B 90 (2014) 060408
http://dx.doi.org/10.1103/PhysRevB.90.060408

Spin-resolved Andreev levels and parity crossings in hybrid superconductor-semiconductor nanostructures
Lee EJH, Jiang X, Houzet M, Aguado R, Lieber CM and De Franceschi S
Nature Nanotechnology 9 (2014) 79-84
http://dx.doi.org/10.1038/nnano.2013.267

Subgap structure in the conductance of a three-terminal Josephson junction
Pfeffer AH, Duvauchelle JE, Courtois H, Melin R, Feinberg D and Lefloch F
Physical Review B 90 (2014) 075401
http://dx.doi.org/10.1103/PhysRevB.90.075401

Double gated single molecular transistor for charge detection
Ray SJ and Chowdhury R
Journal of Applied Physics 116 (2014) 034307
http://dx.doi.org/10.1063/1.4890540

High-quality NbN nanofilms on a GaN/AlN heterostructure
Sam-Giao D, Pouget S, Bougerol C, Monroy E, Grimm A, Jebari S, Hofheinz M, Gerard J-M and Zwiller V
AIP Advances 4 (2014) 107123
http://dx.doi.org/10.1063/1.4898327
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Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry
Villis BJ, Orlov AO, Barraud S, Vinet M, Sanquer M, Fay P, Snider G and Jehl X
Applied Physics Letters 104 (2014) 233503
http://dx.doi.org/10.1063/1.4883228

Control of the ionization state of three single donor atoms in silicon
Voisin B, Cobian M, Jehl X, Vinet M, Niquet YM, Delerue C, De Franceschi S and Sanquer M
Physical Review B 89 (2014) 161404
http://dx.doi.org/10.1103/PhysRevB.89.161404

Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor
Voisin B, Viet-Hung N, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet Y-M, de Franceschi S, et al.
Nano Letters 14 (2014) 2094-2098
http://dx.doi.org/10.1021/nl500299h