Thesis presented December 14, 2005
Abstract: The growth of ordered semiconductor nanostructures, with a controlled size and position, is an major technologic challenge. In this study, we propose an original method to grow by molecular beam epitaxy ordered germanium nanostructures on silicon (001). A periodic array of tilt dislocations is obtained by molecular bounding, and induces a periodic strain field at the surface of the substrate. The observed organization of germanium nanostructures is due to the strain field generated on the silicon surface by an interfacial tilt dislocation array.
Keywords: Molecular bonding, molecular beam epitaxy, silicon, germanium, nanostructure, transmission electron microscopy, strain field
On-line thesis.