highlight / actuality
The results of a study we made pave the way for a low –temperature all-electrical manipulation of electron spins in silicon nano-transistors with perspectives for a fast silicon spin qubit and other quantum spintronics purposes.
Research on silicon-based spin qubits is currently extensively pursued looking for a viable pathway towards large-scale integration. To this aim, access to electric-field-mediated spin control would facilitate device scalability, circumventing the need for more demanding control schemes based on magnetic-field driven spin resonance. Electric-field control requires a mechanism coupling spin and motional degrees of freedom. A natural approach exploits the spin–orbit coupling (SOC), as realized in 2016 for hole spin in silicon at Grenoble. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC.
In this work electrically driven electron–spin resonance (EDSR) in a silicon-on-insulator (SOI) nanowire quantum dot device is realized. The underlying driving mechanism results from an interplay between SOC and the multi-valley structure of the silicon conduction band, which is enhanced in the peculiar non-planar nanowire geometry. A simple model and extensive tight-binding simulations capture the essential physics and provide a full quantitative analysis. This result paves the way for a low –temperature all-electrical manipulation of electron spins in silicon nano-transistors with perspectives for a fast silicon spin qubit and other quantum spintronics purposes.
CEA is a French government-funded technological research organisation in four main areas: low-carbon energies, defense and security, information technologies and health technologies. A prominent player in the European Research Area, it is involved in setting up collaborative projects with many partners around the world.