Plasma Heavily Nitrogen-Doped Vertically Oriented Graphene Nanosheets (N-VOGNs) for High Volumetric Performance On-Chip Supercapacitors in Ionic Liquid
Aradilla D, Delaunay M, Buhagiar M, Aldakov D, Faure-Vincent J, Okuno H, Gerard J-M and Bidan G
Current Smart Materials E-pub Ahead of Print (2017)
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Dislocation-free axial InAs-on-GaAs nanowires on silicon
Beznasyuk DV, Robin E, Den Hertog M, Claudon J and Hocevar M
Nanotechnology 28 (2017) 365602
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Atomic Scale Structural Characterization of Epitaxial (Cd,Cr)Te Magnetic Semiconductor
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Microscopy and Microanalysis 23 (2017) 717-723
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Experimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids
Brik MG, Mahlik S, Jankowski D, Strak P, Korona KP, Monroy E, Krukowski S and Kaminska A
Japanese Journal of Applied Physics 56 (2017) 05FA02
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Electric-Field Sensing with a Scanning Fiber-Coupled Quantum Dot
Cadeddu D, Munsch M, Rossi N, Gerard J-M, Claudon J, Warburton RJ and Poggio M
Physical Review Applied 8 (2017) 031002
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Cu2ZnSnSe4 thin films grown by molecular beam epitaxy
Cure Y, Pouget S, Reita V and Boukari H
Scripta Materialia 130 (2017) 200-204
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Phase discrimination in CdSe structures by means of Raman scattering
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Physica Status Solidi-Rapid Research Letters 11 (2017) 1700006
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Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
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Applied Physics Letters 110 (2017) 011909
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Strain-Gradient Position Mapping of Semiconductor Quantum Dots
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Physical Review Letters 118 (2017) 117401
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A solid-state single-photon filter
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Nature Nanotechnology 12 (2017) 663-+
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Coherent coupling of individual quantum dots measured with phase-referenced two-dimensional spectroscopy: Photon echo versus double quantum coherence
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Physical Review B 96 (2017) 041124
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Thin-Wall GaN/InAlN Multiple Quantum Well Tubes
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Nano Letters 17 (2017) 3347-3355
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LEDs for lighting: Basic physics and prospects for energy savings
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Comptes Rendus Physique 18 (2017) 453-461
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Reducing Phonon-Induced Decoherence in Solid-State Single-Photon Sources with Cavity Quantum Electrodynamics
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Physical Review Letters 118 (2017) 253602
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Influence of phonons on solid-state cavity-QED investigated using nonequilibrium Green's functions
Hornecker G, Auffèves A and Grange T
Physical Review B 95 (2017) 035404
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Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap
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Scientific Reports 7 (2017) 5542
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Light-hole exciton in a nanowire quantum dot
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Enhanced Photon Extraction from a Nanowire Quantum Dot Using a Bottom-Up Photonic Shell
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Cathodoluminescence spectroscopy of plasmonic patch antennas: towards lower order and higher energies
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Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber
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Optics Express 25 (2017) 5366-5375
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Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires
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Nano Letters 17 (2017) 6954-6960
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Short-wave infrared (lambda=3 mu m) intersubband polaritons in the GaN/AlN system
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Applied Physics Letters 110 (2017) 131102
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Effect of Al incorporation in nonpolar m-plane GaN/AlGaN multi-quantum-wells using plasma-assisted molecular-beam epitaxy
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Physica Status Solidi a-Applications and Materials Science 214 (2017) 1600849
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Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
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Semiconductor Science and Technology 32 (2017) 125002
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Gallium kinetics on m-plane GaN
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Applied Physics Letters 111 (2017) 022101
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Carrier Localization in GaN/AlN Quantum Dots As Revealed by Three-Dimensional Multimicroscopy
Mancini L, Moyon F, Hernandez-Maldonado D, Blum I, Houard J, Lefebvre W, Vurpillot F, Das A, Monroy E and Rigutti L
Nano Letters 17 (2017) 4261-4269
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Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip
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Applied Physics Letters 111 (2017) 243102
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Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures
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ACS Nano 11 (2017) 8758-8767
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Resonant driving of a single photon emitter embedded in a mechanical oscillator
Munsch M, Kuhlmann AV, Cadeddu D, Gerard J-M, Claudon J, Poggio M and Warburton RJ
Nature Communications 8 (2017) 76
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Development of AlInN photoconductors deposited by sputtering
Nunez-Cascajero A, Jimenez-Rodriguez M, Monroy E, Gonzalez-Herraez M and Naranjo FB
Physica Status Solidi a-Applications and Materials Science 214 (2017) 1600780
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In-rich AlxIn1-xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers
Nunez-Cascajero A, Valdueza-Felip S, Monteagudo-Lerma L, Monroy E, Taylor-Shaw E, Martin RW, Gonzalez-Herraez M and Naranjo FB
Journal of Physics D-Applied Physics 50 (2017) 065101
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Control of the incubation time in the vapor-solid-solid growth of semiconductor nanowires
Orru M, den Hertog M, Robin E, Genuist Y, Andre R, Cibert J and Bellet-Amalric E
Applied Physics Letters 110 (2017) 263107
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Antireflective Photonic Structure for Coherent Nonlinear Spectroscopy of Single Magnetic Quantum Dots
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Crystal Growth and Design 17 (2017) 2987-2992
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Doping beta-Ga2O3 with europium: influence of the implantation and annealing temperature
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Journal of Physics D-Applied Physics 50 (2017) 325101
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Low temperature time resolved photoluminescence in ordered and disordered Cu2ZnSnS4 single crystals
Raadik T, Krustok J, Kauk-Kuusik M, Timmo K, Grossberg M, Ernits K and Bleuse J
Physica B-Condensed Matter 508 (2017) 47-50
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Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics
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Superconductor Science and Technology 30 (2017) 035005
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Silane-Induced N-Polarity in Wires Probed by a Synchrotron Nanobeam
Salomon D, Messanvi A, Eymery J and Martinez-Criado G
Nano Letters 17 (2017) 946-952
http://dx.doi.org/10.1021/acs.nanolett.6b04291

Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
Spies M, den Hertog MI, Hille P, Schoermann J, Polaczynski J, Gayral B, Eickhoff M, Monroy E and Laehnemann J
Nano Letters 17 (2017) 4231-4239
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Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures
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AIP Advances 7 (2017) 015027
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Q factor limitation at short wavelength (around 300 nm) in III-nitride-onsilicon photonic crystal cavities
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Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors
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Scientific Reports 7 (2017) 14783
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Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template
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Nanotechnology 28 (2017) 255602
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P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
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Solar Energy Materials and Solar Cells 160 (2017) 355-360
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Exploring coherence of individual excitons in InAs quantum dots embedded in natural photonic defects: Influence of the excitation intensity
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Physical Review B 96 (2017) 165311
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Comprehensive analyses of core-shell InGaN/GaN single nanowire photodiodes
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Journal of Physics D-Applied Physics 50 (2017) 484001
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