Purcell effect on CdSe/ZnSe quantum dots in pillar microcavities
Andre R, Robin IC, Balocchi A, Carayon S, Moehl S, Gérard JM
Physica Status Solidi B-Basic Solid State Physics 243 (2006) 827-830
http://dx.doi.org/10.1002/pssb.200564606
Optical transitions in Eu3+ ions in GaN : Eu grown by molecular beam epitaxy
Andreev T, Liem NQ, Hori Y, Tanaka M, Oda O, Dang DLS, Daudin B
Physical Review B 73 (2006) 195203
http://dx.doi.org/10.1103/PhysRevB.73.195203
Optical study of excitation and deexcitation of Tm in GaN quantum dots
Andreev T, Liem NQ, Hori Y, Tanaka M, Oda O, Dang DLS, Daudin B, Gayral B
Physical Review B 74 (2006) 155310
http://dx.doi.org/10.1103/PhysRevB.74.155310
Study of lattice properties of Ga(1-x)Mn(x)Nepilayers grown by plasma-assisted molecular beam epitaxy by means of optical techniques
Asghar M, Hussain I, Bustarret E, Cibert J, Kuroda S, Marcet S, Mariette H
Journal of Crystal Growth 296 (2006) 174-178
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Properties of Ga(1-x)Mn(x)Nepilayers grown by plasma-assisted molecular beam epitaxy using Raman spectroscopy
Asghar M, Hussain I, Saleemi F, Bustarret E, Cibert J, Kuroda S, Marcet S, Mariette H, Bhatti AS
Materials Science and Engineering B-Solid State Materials for Advanced Technology 133 (2006) 102-107
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Electrically adjustable intersubband absorption of a GaN/AlN superlattice grown on a transistorlike structure
Baumann E, Giorgetta FR, Hofstetter D, Leconte S, Guillot F, Bellet-Amalric E, Monroy E
Applied Physics Letters 89 (2006) 101121
http://dx.doi.org/10.1063/1.2348759
Linear and dynamical photoinduced dichroisms of InAs/GaAs self-assembled quantum dots: Population relaxation and decoherence measurements
Bernardot F, Aubry E, Tribollet J, Testelin C, Chamarro M, Lombez L, Braun PF, Marie X, Amand T, Gerard JM
Physical Review B 73 (2006) 085301
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Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot
Berthelot A, Favero I, Cassabois G, Voisin C, Delalande C, Roussignol P, Ferreira R, Gerard JM
Nature Physics 2 (2006) 759-764
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Spin susceptibility enhancement in a two-dimensional hole gas
Boukari H, Perez F, Ferrand D, Kossacki P, Jusserand B, Cibert J
Physical Review B 73 (2006) 115320
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Resonant Raman scattering by CdTe quantum-well-confined optical phonons in a semiconductor microcavity
Bruchhausen A, Fainstein A, Jusserand B, Andre R
Physical Review B 73 (2006) 085305
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Coherent spin dynamics of exciton-polaritons in diluted magnetic microcavities
Brunetti A, Vladimirova M, Scalbert D, Andre R, Solnyshkov D, Malpuech G, Shelykh IA, Kavokin AV
Physical Review B 73 (2006) 205337
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Growth of the Zn1-xMnxO alloy by the MOCVD technique
Chikoidze E, Dumont Y, Jomard F, Ballutaud D, Galtier P, Ferrand D, Sallet V, Gorochov O
Materials Research Bulletin 41 (2006) 1038-1044
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Depth-resolved optical studies of excitonic and phonon-assisted transitions in ZnO epilayers
Cho YH, Kim JY, Kwack HS, Kwon BJ, Dang LS, Ko HJ, Yao T
Applied Physics Letters 89 (2006) 201903
http://dx.doi.org/10.1063/1.2388252
Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides
Cho YH, Kwack HS, Kwon BJ, Barjon J, Brault J, Daudin B, Dang LS
Applied Physics Letters 89 (2006) 251914
http://dx.doi.org/10.1063/1.2420776
Mechanism of GaN quantum dots capped with AlN: An AFM, electron microscopy, and x-ray anomalous diffraction study
Coraux J, Amstatt B, Budagoski JA, Bellet-Amalric E, Rouviere JL, Favre-Nicolin V, Proietti MG, Renevier H, Daudin B
Physical Review B 74 (2006) 195302
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In situ and ex situ grazing incidence diffraction anomalous fine structure study of GaN/AIN quantum dots
Coraux J, Renevier H, Proietti MG, Favre-Nicolin V, Daudin B, Renaud G
Physica Status Solidi B-Basic Solid State Physics 243 (2006) 1519-1523
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Raman study and theoretical calculations of strain in GaN quantum dot multilayers
Cros A, Garro N, Llorens JM, Garcia-Cristobal A, Cantarero A, Gogneau N, Monroy E, Daudin B
Physical Review B 73 (2006) 115313
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Motional enhancement of exciton magnetic moments in zinc-blende semiconductors
Davies JJ, Wolverson D, Kochereshko VP, Platonov AV, Cox RT, Cibert J, Mariette H, Bodin C, Gourgon C, Ubyivovk EV, Efimov YP, Eliseev SA
Physical Review Letters 97 (2006) 187403
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Surface diffusion dewetting of thin solid films: Numerical method and application to Si/SiO2
Dornel E, Barbe JC, de Crecy F, Lacolle G, Eymery J
Physical Review B 73 (2006) 115427
http://dx.doi.org/10.1103/PhysRevB.73.115427
Intraband photodetection at 1.3-1.5 mu m in self-organized GaN/AlN quantum dots
Doyennette L, Vardi A, Guillot F, Nevou L, Tchernycheva M, Lupu A, Colombelli R, Bahir G, Monroy E, Julien FH
Physica Status Solidi B-Basic Solid State Physics 243 (2006) 3993-3997
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Resonant Raman scattering in self-assembled GaN/AlN quantum dots
Garro N, Cros A, Llorens JM, Garcia-Cristobal A, Cantarero A, Gogneau N, Sarigiannidou E, Monroy E, Daudin B
Physical Review B 74 (2006) 075305
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Unit-cell intergrowth of pyrochlore and hexagonal tungsten bronze structures in secondary tungsten minerals
Grey IE, Birch WD, Bougerol C, Mills SJ
Journal of Solid State Chemistry 179 (2006) 3860-3869
http://dx.doi.org/10.1016/j.jssc.2006.08.030
Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths
Guillot F, Bellet-Amalric E, Monroy E, Tchernycheva M, Nevou L, Doyennette L, Julien FH, Dang LS, Remmele T, Albrecht M, Shibata T, Tanaka M
Journal of Applied Physics 100 (2006) 044326
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GaN/AlGaN superlattices for optoelectronics in the mid-infrared
Guillot F, Monroy E, Gayral B, Bellet-Amalric E, Jalabert D, Gerard JM, Dang LS, Tchernycheva M, Julien FH, Monnoye S, Mank H
Physica Status Solidi B-Basic Solid State Physics 243 (2006) 1669-1673
http://dx.doi.org/10.1002/pssb.200565328
High-quality AlN/GaN-superlattice structures for the fabrication of narrow-band 1.4 mu m photovoltaic intersubband detectors
Hofstetter D, Baumann E, Giorgetta FR, Graf M, Maier M, Guillot F, Bellet-Amalric E, Monroy E
Applied Physics Letters 88 (2006) 121112
http://dx.doi.org/10.1063/1.2185613
Undoped and rare-earth doped GaN quantum dots on AlGaN
Hori Y, Andreev T, Florian T, Bellet-Amalric E, Dang DLS, Tanaka M, Oda O, Daudin B
Physica Status Solidi B-Basic Solid State Physics 243 (2006) 1472-1475
http://dx.doi.org/10.1002/pssb.200565190
GaN quantum dots doped with Tb
Hori Y, Andreev T, Jalabert D, Monroy E, Dang LS, Daudin B, Tanaka M, Oda O
Applied Physics Letters 88 (2006) 3102
http://dx.doi.org/10.1063/1.2168504
High-Curie-temperature ferromagnetism in self-organized Ge1-xMnx nanocolumns
Jamet M, Barski A, Devillers T, Poydenot V, Dujardin R, Bayle-Guillemaud P, Rothman J, Bellet-Amalric E, Marty A, Cibert J, Mattana R, Tatarenko S
Nature Materials 5 (2006) 653-659
http://dx.doi.org/10.1038/nmat1686
Bose-Einstein condensation of exciton polaritons
Kasprzak J, Richard M, Kundermann S, Baas A, Jeambrun P, Keeling JMJ, Marchetti FM, Szymanska MH, Andre R, Staehli JL, Savona V, Littlewood PB, Deveaud B, Dang LS
Nature 443 (2006) 409-414
http://dx.doi.org/10.1038/nature05131
The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots
Kundys DO, Murzyn P, Wells JPR, Tartakovskii AI, Skolnick MS, Dang LS, Lutsenko EV, Tarasuk NP, Lyublinskaya OG, Toropov AA, Ivanov SV
Journal of Applied Physics 100 (2006) 123510
http://dx.doi.org/10.1063/1.2402793
Electrical control of a single mn atom in a quantum dot
Leger Y, Besombes L, Fernandez-Rossier J, Maingault L, Mariette H
Physical Review Letters 97 (2006) 107401
http://dx.doi.org/10.1103/PhysRevLett.97.107401
Inserting one single Mn ion into a quantum dot
Maingault L, Besombes L, Leger Y, Bougerol C, Mariette H
Applied Physics Letters 89 (2006) 193109
http://dx.doi.org/10.1063/1.2387116
Control of single spins in individual magnetic quantum dots
Mariette H, Besombes L, Bougerol C, Ferrand D, Leger Y, Maingault L, Cibert J
Physica Status Solidi B-Basic Solid State Physics 243 (2006) 3709-3718
http://dx.doi.org/10.1002/pssb.200642256
Microphotoluminescence study of p-type (Cd,Mn)Te quantum wells
Maslana W, Kossacki P, Plochocka P, Golnik A, Gaj JA, Ferrand D, Bertolini M, Tatarenko S, Cibert J
Applied Physics Letters 89 (2006) 052104
http://dx.doi.org/10.1063/1.2236218
The effect of AlAs submonolayer insertion on the oscillator strength of excitons in GaAs/AlGaAs quantum wells
Mejri C, Chaouache M, Maaref M, Voisin P, Gerard JM
Semiconductor Science and Technology 21 (2006) 1018-1021
http://dx.doi.org/10.1088/0268-1242/21/8/005
Strong heavy-hole-light-hole mixing in CdZnSe quantum dots
Moehl S, Robin IC, Leger Y, Andre R, Besombes L, Kheng K
Physica Status Solidi B-Basic Solid State Physics 243 (2006) 849-852
http://dx.doi.org/10.1002/pssb.200564717
Observation of hot luminescence and slow inter-sub-band relaxation in Si-doped GaN/AlxGa1-xN (x=0.11, 0.25) multi-quantum-well structures
Monroy E, Guillot F, Gayral B, Bellet-Amalric E, Jalabert D, Gerard JM, Dang LS, Tchernycheva M, Julien FH
Journal of Applied Physics 99 (2006) 093513
http://dx.doi.org/10.1063/1.2193042
Luminescence properties of highly Si-doped AlN
Monroy E, Zenneck J, Cherkashinin G, Ambacher O, Hermann M, Stutzmann M, Eickhoff M
Applied Physics Letters 88 (2006) 071906
http://dx.doi.org/10.1063/1.2173622
Room-temperature intersubband emission of GaN/AlN quantum wells at lambda=2.3 mu m
Nevou L, Julien FH, Colombelli R, Guillot E, Monroy E
Electronics Letters 42 (2006) 1308-1309
http://dx.doi.org/10.1049/el:20062282
Intersubband resonant enhancement of second-harmonic generation in GaN/AlN quantum wells
Nevou L, Tchernycheva M, Julien F, Raybaut M, Godard A, Rosencher E, Guillot F, Monroy E
Applied Physics Letters 89 (2006) 151101
http://dx.doi.org/10.1063/1.2358118
Effect of the s,p-d exchange interaction on the excitons in Zn1-xCoxO epilayers
Pacuski W, Ferrand D, Cibert J, Deparis C, Gaj JA, Kossacki P, Morhain C
Physical Review B 73 (2006) 035214
http://dx.doi.org/10.1103/PhysRevB.73.035214
Ge quantum dots growth on nanopatterned Si(001) surface: Morphology and stress relaxation study
Pascale A, Gentile P, Eymery J, Meziere J, Bavard A, Schulli TU, Fournel F
Surface Science 600 (2006) 3187-3193
http://dx.doi.org/10.1016/j.susc.2006.06.004
Time- and spectrally-resolved four-wave mixing in single CdTe/ZnTe quantum dots
Patton B, Langbein W, Woggon U, Maingault L, Mariette H
Physical Review B 73 (2006) 235354
http://dx.doi.org/10.1103/PhysRevB.73.235354
Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 mu m
Pougeoise E, Gilet P, Grosse P, Poncet S, Chelnokov A, Gerard JM, Bourgeois G, Stevens R, Hamelin R, Hammar M, Berggren J, Sundgren P
Electronics Letters 42 (2006) 584-586
http://dx.doi.org/10.1049/el:20060060
Elastic and surface energies: Two key parameters for CdSe quantum dot formation
Robin IC, Andre R, Bougerol C, Aichele T, Tatarenko S
Applied Physics Letters 88 (2006) 233103
http://dx.doi.org/10.1063/1.2209202
Relation between growth procedure and confinement properties of CdSe/ZnSe quantum dots
Robin IC, Andre R, Gerard JM
Physical Review B 74 (2006) 155318
http://dx.doi.org/10.1103/PhysRevB.74.155318
Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures
Sarigiannidou E, Monroy E, Gogneau N, Radtke G, Bayle-Guillemaud P, Bellet-Amalric E, Daudin B, Rouviere JL
Semiconductor Science and Technology 21 (2006) 612-618
http://dx.doi.org/10.1088/0268-1242/21/5/008
Near-field optical imaging with a CdSe single nanocrystal-based active tip
Sonnefraud Y, Chevalier N, Motte JF, Huant S, Reiss P, Bleuse J, Chandezon F, Burnett MT, Ding W, Maier SA
Optics Express 14 (2006) 10596-10602
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Electron confinement in strongly coupled GaN/AlN quantum wells
Tchernycheva M, Nevou L, Doyennette L, Julien FH, Guillot F, Monroy E, Remmele T, Albrecht M
Applied Physics Letters 88 (2006) 153113
http://dx.doi.org/10.1063/1.2193057
Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells
Tchernycheva M, Nevou L, Doyennette L, Julien FH, Guillot F, Monroy E, Remmele T, Albrecht M
Physica Status Solidi B-Basic Solid State Physics 243 (2006) 1630-1633
http://dx.doi.org/10.1002/pssb.200565116
Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells
Tchernycheva M, Nevou L, Doyennette L, Julien FH, Warde E, Guillot F, Monroy E, Bellet-Amalric E, Remmele T, Albrecht M
Physical Review B 73 (2006) 125347
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Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies
Teisseyre H, Suski T, Lepkowski SP, Perlin P, Jurczak G, Dluzewski P, Daudin B, Grandjean N
Applied Physics Letters 89 (2006) 051902
http://dx.doi.org/10.1063/1.2219381
Nanowire-based one-dimensional electronics
Thelander C, Agarwal P, Brongersma S, Eymery J, Feiner LF, Forchel A, Scheffler M, Riess W, Ohlsson BJ, Gosele U, Samuelson L
Materials Today 9 (2006) 28-35
http://dx.doi.org/10.1016/S1369-7021(06)71651-0
Simulation of x-ray spectrum of absorption of dilute magnetic semiconductors GaN:Mn, GaAs and Ge:Mn
Titov A, Kulatov E, Uspenskii Y, Biquard X, Halley D, Kuroda S, Bellet-Amalric E, Mariette H, Cibert J
Bulletin of the Lebedev Physics Institute 2006 (2006) 8-15
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Coexistence of type-I and type-II band lineups in Cd(Te,Se)/ZnSe quantum-dot structures
Toropov AA, Sedova IV, Lyublinskaya OG, Sorokin SV, Sitnikova AA, Ivanov SV, Bergman JP, Monemar B, Donatini F, Dang LS
Applied Physics Letters 89 (2006) 123110
http://dx.doi.org/10.1063/1.2355439
Comment on "Destructive effect of disorder and bias voltage on interface resonance transmission in symmetric tunnel junctions" - Tusche et al. reply
Tusche C, Meyerheim HL, Jedrecy N, Renaud G, Ernst A, Henk J, Bruno P, Kirschner J
Physical Review Letters 96 (2006) 119602
http://dx.doi.org/10.1103/PhysRevLett.96.119602
Room temperature demonstration of GaN/AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength
Vardi A, Akopian N, Bahir G, Doyennette L, Tchernycheva M, Nevou L, Julien FH, Guillot F, Monroy E
Applied Physics Letters 88 (2006) 143101
http://dx.doi.org/10.1063/1.2186108
Room temperature emission from Er-doped silicon-rich oxide microtorus
Verbert J, Mazen F, Charvolin T, Picard E, Calvo V, Noe P, Gerard JM, Hadji E, Orucevic F, Hare J, Lefevre-Seguin V
European Physical Journal-Applied Physics 34 (2006) 81-84
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