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Publications de l'équipe en 2015

Publié le 12 décembre 2018

Vertically aligned graphene nanosheets on silicon using an ionic liquid electrolyte: towards high performance on-chip micro-supercapacitors
Aradilla D, Delaunay M, Sadki S, Gerard J-M and Bidan G
Journal of Materials Chemistry A 3 (2015) 19254-19262
http://dx.doi.org/10.1039/c5ta04578a
HAL <hal-01580614>

Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries
Auzelle T, Haas B, Den Hertog M, Rouviere J-L, Daudin B and Gayral B
Applied Physics Letters 107 (2015) 051904
http://dx.doi.org/10.1063/1.4927826
HAL <hal-01586122>

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires
Auzelle T, Haas B, Minj A, Bougerol C, Rouviere J-L, Cros A, Colchero J and Daudin B
Journal of Applied Physics 117 (2015) 245303
http://dx.doi.org/10.1063/1.4923024
HAL <hal-01226735>

Long-lived excitons in GaN/AlN nanowire heterostructures
Beeler M, Lim CB, Hille P, Bleuse J, Schoermann J, de la Mata M, Arbiol J, Eickhoff M and Monroy E
Physical Review B 91 (2015) 205440
http://dx.doi.org/10.1103/PhysRevB.91.205440
HAL <cea-01274685>

Quantum-dot-based integrated non-linear sources
Bernard A, Mariani S, Andronico A, Gerard J-M, Kamp M, Jepsen P-U and Leo G
IET Optoelectronics 9 (2015) 82-87
http://dx.doi.org/10.1049/iet-opt.2014.0095
HAL <hal-01587152>

Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography
Bonef B, Gerard L, Rouviere J-L, Grenier A, Jouneau P-H, Bellet-Amalric E, Mariette H, Andre R and Bougerol C
Applied Physics Letters 106 (2015) 051904
http://dx.doi.org/10.1063/1.4907648
HAL <hal-01132475>

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires
Dai X, Messanvi A, Zhang H, Durand C, Eymery J, Bougerol C, Julien FH and Tchernycheva M
Nano Letters 15 (2015) 6958-6964
http://dx.doi.org/10.1021/acs.nanolett.5b02900
HAL <hal-01252043>

Si Donor Incorporation in GaN Nanowires
Fang Z, Robin E, Rozas-Jimenez E, Cros A, Donatini F, Mollard N, Pernot J and Daudin B
Nano Letters 15 (2015) 6794-6801
http://dx.doi.org/10.1021/acs.nanolett.5b02634
HAL <(à corriger) hal-01319867>

Implementation and mechanical characterization of 2 nm thin diamond like carbon suspended membranes
Ghis A, Sridi N, Delaunay M and Gabriel J-CP
Diamond and Related Materials 57 (2015) 53-57
http://dx.doi.org/10.1016/j.diamond.2015.02.006
HAL <cea-01549155>

Cavity-enhanced two-photon interference using remote quantum dot sources
Giesz V, Portalupi SL, Grange T, Anton C, De Santis L, Demory J, Somaschi N, Sagnes I, Lemaitre A, Lanco L, et al.
Physical Review B 92 (2015) 161302
http://dx.doi.org/10.1103/PhysRevB.92.161302
HAL <hal-01593302>

Contrasting influence of charged impurities on transport and gain in terahertz quantum cascade lasers
Grange T
Physical Review B 92 (2015) 241306
http://dx.doi.org/10.1103/PhysRevB.92.241306
HAL <hal-01593541>

Cavity-Funneled Generation of Indistinguishable Single Photons from Strongly Dissipative Quantum Emitters
Grange T, Hornecker G, Hunger D, Poizat J-P, Gerard J-M, Senellart P and Auffeves A
Physical Review Letters 114 (2015) 193601
http://dx.doi.org/10.1103/PhysRevLett.114.193601
HAL <hal-01152522>

Inversion Domain Boundaries in GaN Wires Revealed by Coherent Bragg Imaging
Labat S, Richard M-I, Dupraz M, Gailhanou M, Beutier G, Verdier M, Mastropietro F, Cornelius TW, Schuelli TU, Eymery J, et al.
ACS Nano 9 (2015) 9210-9216
http://dx.doi.org/10.1021/acsnano.5b03857
HAL <hal-01251242>

Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5-10THz band
Lim CB, Ajay A, Bougerol C, Haas B, Schoermann J, Beeler M, Laehnemann J, Eickhoff M and Monroy E
Nanotechnology 26 (2015) 435201
http://dx.doi.org/10.1088/0957-4484/26/43/435201
HAL <hal-01226731>

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions
Lim CB, Beeler M, Ajay A, Laehnemann J, Bellet-Amalric E, Bougerol C and Monroy E
Journal of Applied Physics 118 (2015) 014309
http://dx.doi.org/10.1063/1.4926423
HAL <hal-01226733>

Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires
Messanvi A, Zhang H, Neplokh V, Julien FH, Bayle F, Foldyna M, Bougerol C, Gautier E, Babichev A, Durand C, et al.
ACS Applied Materials and Interfaces 7 (2015) 21898-21906
http://dx.doi.org/10.1021/acsami.5b06473
HAL <hal-01230123>

Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy
Minj A, Cros A, Garro N, Colchero J, Auzelle T and Daudin B
Nano Letters 15 (2015) 6770-6776
http://dx.doi.org/10.1021/acs.nanolett.5b02607
HAL <hal-01616168>

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
Neplokh V, Messanvi A, Zhang H, Julien FH, Babichev A, Eymery J, Durand C and Tchernycheva M
Nanoscale Research Letters 10 (2015) 447
http://dx.doi.org/10.1186/s11671-015-1143-5
HAL <hal-01320698>

Four-wave mixing in quantum wells using femtosecond pulses with Laguerre-Gauss modes
Persuy D, Ziegler M, Cregut O, Kheng K, Gallart M, Hoenerlage B and Gilliot P
Physical Review B 92 (2015) 115312
http://dx.doi.org/10.1103/PhysRevB.92.115312
HAL <hal-01616167>

Bright Phonon-Tuned Single-Photon Source
Portalupi SL, Hornecker G, Giesz V, Grange T, Lemaitre A, Demory J, Sagnes I, Lanzillotti-Kimura ND, Lanco L, Auffeves A, et al.
Nano Letters 15 (2015) 6290-6294
http://dx.doi.org/10.1021/acs.nanolett.5b00876
HAL <hal-01196331>

Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
Redaelli L, Mukhtarova A, Ajay A, Nunez-Cascajero A, Valdueza-Felip S, Bleuse J, Durand C, Eymery J and Monroy E
Japanese Journal of Applied Physics 54 (2015) 072302
http://dx.doi.org/10.7567/jjap.54.072302
HAL <hal-01616166>

Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation
Redaelli L, Wenzel H, Piprek J, Weig T, Einfeldt S, Martens M, Luekens G, Schwarz UT and Kneissl M
IEEE Journal of Quantum Electronics 51 (2015) 2000506
http://dx.doi.org/10.1109/jqe.2015.2444662
HAL <hal-01616165>

Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires
Rodrigues J, Leitao MF, Carreira JFC, Ben Sedrine N, Santos NF, Felizardo M, Auzelle T, Daudin B, Alves E, Neves AJ, et al.
Journal of Physical Chemistry C 119 (2015) 17954-17964
http://dx.doi.org/10.1021/acs.jpcc.5b05101
HAL <hal-01616163>

Highly directive and Gaussian far-field emission from "giant" photonic trumpets
Stepanov P, Delga A, Gregersen N, Peinke E, Munsch M, Teissier J, Mork J, Richard M, Bleuse J, Gerard J-M, et al.
Applied Physics Letters 107 (2015) 141106
http://dx.doi.org/10.1063/1.4932574
HAL <hal-01359442>

Quantum dot spontaneous emission control in a ridge waveguide
Stepanov P, Delga A, Zang X, Bleuse J, Dupuy E, Peinke E, Lalanne P, Gerard J-M and Claudon J
Applied Physics Letters 106 (2015) 041112
http://dx.doi.org/10.1063/1.4906921
HAL <hal-01381358>

Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature
Zannier V, Cremel T, Artioli A, Ferrand D, Kheng K, Grillo V and Rubini S
Journal of Applied Physics 118 (2015) 095702
http://dx.doi.org/10.1063/1.4929821
HAL <hal-01616164>

Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon
Zeng Y, Roland I, Checoury X, Han Z, El Kurdi M, Sauvage S, Gayral B, Brimont C, Guillet T, Mexis M, et al.
Applied Physics Letters 106 (2015) 081105
http://dx.doi.org/10.1063/1.4913679
HAL <hal-01130620>