Imaging and Analysis by Transmission Electron Microscopy of the Spontaneous Formation of Al-Rich Shell Structure in AlxGa1-xN/GaN Nanowires
Allah RF, Ben T, Songmuang R, Gonzalez D
Applied Physics Express 5 (2012) 045002
http://dx.doi.org/10.1143/apex.5.045002

Tuning of a nonlinear THz emitter
Andronico A, Mariani S, Ghiglieno F, Claudon J, Munsch M, Gerard JM, Favero I, Ducci S, Leo G
Optics Express 20 (2012) 17678-17683
http://dx.doi.org/10.1364/oe.20.017678

Interface-driven phase separation in multifunctional materials: The case of the ferromagnetic semiconductor GeMn
Arras E, Lancon F, Slipukhina I, Prestat E, Rovezzi M, Tardif S, Titov A, Bayle-Guillemaud P, d'Acapito F, Barski A, Favre-Nicolin V, Jamet M, Cibert J, Pochet P
Physical Review B 85 (2012) 115204
http://dx.doi.org/10.1103/PhysRevB.85.115204

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
Balaji M, Claudel A, Fellmann V, Gelard I, Blanquet E, Boichot R, Pierret A, Attal-Tretout B, Crisci A, Coindeau S, Roussel H, Pique D, Baskar K, Pons M
Journal of Alloys and Compounds 526 (2012) 103-109
http://dx.doi.org/10.1016/j.jallcom.2012.02.111

Ultrafast Room Temperature Single-Photon Source from Nanowire-Quantum Dots
Bounouar S, Elouneg-Jamroz M, den Hertog M, Morchutt C, Bellet-Amalric E, Andre R, Bougerol C, Genuist Y, Poizat JP, Tatarenko S, Kheng K
Nano Letters 12 (2012) 2977-2981
http://dx.doi.org/10.1021/nl300733f

Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires
Bounouar S, Morchutt C, Elouneg-Jamroz M, Besombes L, Andre R, Bellet-Amalric E, Bougerol C, Den Hertog M, Kheng K, Tatarenko S, Poizat JP
Physical Review B 85 (2012) 035428
http://dx.doi.org/10.1103/PhysRevB.85.035428

Extraction of the homogeneous linewidth of the spectrally diffusing line of a CdSe/ZnSe quantum dot embedded in a nanowire
Bounouar S, Trichet A, Elouneg-Jamroz M, Andre R, Bellet-Amalric E, Bougerol C, Den Hertog M, Kheng K, Tatarenko S, Poizat JP
Physical Review B 86 (2012) 085325
http://dx.doi.org/10.1103/PhysRevB.86.085325

Atomistic simulations of the optical absorption of type-II CdSe/ZnTe superlattices
Boyer-Richard S, Robert C, Gerard L, Richters JP, Andre R, Bleuse J, Mariette H, Even J, Jancu JM
Nanoscale Research Letters 7 (2012) 543
http://dx.doi.org/10.1186/1556-276x-7-543

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors
Den Hertog MI, Gonzalez-Posada F, Songmuang R, Rouviere JL, Fournier T, Fernandez B, Monroy E
Nano Letters 12 (2012) 5691-5696
http://dx.doi.org/10.1021/nl302890f

Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires
Fischer AM, Sun KW, Ponce FA, Songmuang R, Monroy E
Applied Physics Express 5 (2012) 025001
http://dx.doi.org/10.1143/apex.5.025001

Stress-driven island growth on top of nanowires
Glas F, Daudin B
Physical Review B 86 (2012) 174112
http://dx.doi.org/10.1103/PhysRevB.86.174112

Room-Temperature Photodetection Dynamics of Single GaN Nanowires
Gonzalez-Posada F, Songmuang R, Den Hertog M, Monroy E
Nano Letters 12 (2012) 172-176
http://dx.doi.org/10.1021/nl2032684

Cu2ZnSn(S1-xSex)(4) based solar cell produced by selenization of vacuum deposited precursors
Grenet L, Bernardi S, Kohen D, Lepoittevin C, Noel S, Karst N, Brioude A, Perraud S, Mariette H
Solar Energy Materials and Solar Cells 101 (2012) 11-14
http://dx.doi.org/10.1016/j.solmat.2012.02.016

High quality factor photonic resonators for nitride quantum dots
Guillet T, Mexis M, Sergent S, Neel D, Rennesson S, Brimont C, Bretagnon T, Gil B, Sam-Giao D, Gayral B, Semond F, Leroux M, David S, Checoury X, Boucaud P
Physica Status Solidi B-Basic Solid State Physics 249 (2012) 449-454
http://dx.doi.org/10.1002/pssb.201100226

Observation of a stronger-than-adiabatic change of light trapped in an ultrafast switched GaAs-AlAs microcavity
Harding PJ, Bakker HJ, Hartsuiker A, Claudon J, Mosk AP, Gerard JM, Vos WL
Journal of the Optical Society of America B-Optical Physics 29 (2012) A1-A5
http://dx.doi.org/10.1364/JOSAB.29.0000A1

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
Hestroffer K, Leclere C, Cantelli V, Bougerol C, Renevier H, Daudin B
Applied Physics Letters 100 (2012) 212107
http://dx.doi.org/10.1063/1.4721521

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
Himwas C, Songmuang R, Dang LS, Bleuse J, Rapenne L, Sarigiannidou E, Monroy E
Applied Physics Letters 101 (2012) 241914
http://dx.doi.org/10.1063/1.4770075

Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells
Jacopin G, Bugallo AD, Lavenus P, Rigutti L, Julien FH, Zagonel LF, Kociak M, Durand C, Salomon D, Chen XJ, Eymery J, Tchernycheva M
Applied Physics Express 5 (2012) 014101
http://dx.doi.org/10.1143/apex.5.014101

Strain state of GaN nanodisks in AlN nanowires studied by medium energy ion spectroscopy
Jalabert D, Cure Y, Hestroffer K, Niquet YM, Daudin B
Nanotechnology 23 (2012) 425703
http://dx.doi.org/10.1088/0957-4484/23/42/425703

Optical study of GaAs quantum dots embedded into AlGaAs nanowires
Kats VN, Kochereshko VP, Platonov AV, Chizhova TV, Cirlin GE, Bouravleuv AD, Samsonenko YB, Soshnikov IP, Ubyivovk EV, Bleuse J, Mariette H
Semiconductor Science and Technology 27 (2012) 015009
http://dx.doi.org/10.1088/0268-1242/27/1/015009

Photoluminescence of single quantum wires and quantum dots
Kochereshko VP, Kats VN, Platonov AV, Suris RA, Cirlin GE, Buravlev AD, Samsonenko YB, Besombes L, Le Gal C, Mariette H
Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques 6 (2012) 722-725
http://dx.doi.org/10.1134/S1027451012060158

Four-wave mixing excitations in a dissipative polariton quantum fluid
Kohnle V, Leger Y, Wouters M, Richard M, Portella-Oberli MT, Deveaud B
Physical Review B 86 (2012) 064508
http://dx.doi.org/10.1103/PhysRevB.86.064508

Structure and strain state of polar and semipolar InGaN quantum dots
Koukoula T, Lotsari A, Kehagias T, Dimitrakopulos GP, Hausler I, Das A, Monroy E, Karakostas T, Komninou P
Applied Surface Science 260 (2012) 7-12
http://dx.doi.org/10.1016/j.apsusc.2011.12.034

Electron-nuclei spin dynamics in II-VI semiconductor quantum dots
Le Gall C, Brunetti A, Boukari H, Besombes L
Physical Review B 85 (2012) 195312
http://dx.doi.org/10.1103/PhysRevB.85.195312

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability
Lekhal K, Avit G, Andre Y, Trassoudaine A, Gil E, Varenne C, Bougerol C, Monier G, Castelluci D
Nanotechnology 23 (2012) 405601
http://dx.doi.org/10.1088/0957-4484/23/40/405601

Morphology and origin of V-defects in semipolar (11-22) InGaN
Lotsari A, Das A, Kehagias T, Kotsar Y, Monroy E, Karakostas T, Gladkov P, Komninou P, Dimitrakopulos GP
Journal of Crystal Growth 339 (2012) 1-7
http://dx.doi.org/10.1016/j.jcrysgro.2011.11.055

Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells
Lupu A, Tchernycheva M, Kotsar Y, Monroy E, Julien FH
Optics Express 20 (2012) 12541-12549
http://dx.doi.org/10.1364/OE.20.012541

Paramagnetic shift in thermally annealed CdxZn1-xSe quantum dots
Margapoti E, Alves FM, Mahapatra S, Lopez-Richard V, Worschech L, Brunner K, Qu F, Destefani C, Menendez-Proupin E, Bougerol C, Forchel A, Marques GE
New Journal of Physics 14 (2012) 043038
http://dx.doi.org/10.1088/1367-2630/14/4/043038

Surface optical phonon modes in GaN nanowire arrays: Dependence on nanowire density and diameter
Mata R, Cros A, Hestroffer K, Daudin B
Physical Review B 85 (2012) 035322
http://dx.doi.org/10.1103/PhysRevB.85.035322

The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy
Moon P, Lee JD, Ha SK, Lee EH, Choi WJ, Song JD, Kim JS, Dang LS
Physica Status Solidi-Rapid Research Letters 6 (2012) 445-447
http://dx.doi.org/10.1002/pssr.201206369

Composition and morphology of self-organized Mn-rich nanocolumns embedded in Ge: Correlation with the magnetic properties
Mouton I, Larde R, Talbot E, Cadel E, Genevois C, Blavette D, Baltz V, Prestat E, Bayle-Guillemaud P, Barski A, Jamet M
Journal of Applied Physics 112 (2012) 113918
http://dx.doi.org/10.1063/1.4768723

Linearly Polarized, Single-Mode Spontaneous Emission in a Photonic Nanowire
Munsch M, Claudon J, Bleuse J, Malik NS, Dupuy E, Gerard JM, Chen YT, Gregersen N, Mork J
Physical Review Letters 108 (2012) 077405
http://dx.doi.org/10.1103/PhysRevLett.108.077405

Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes
Munsch M, Claudon J, Malik NS, Gilbert K, Grosse P, Gerard JM, Albert F, Langer F, Schlereth T, Pieczarka MM, Hofling S, Kamp M, Forchel A, Reitzenstein S
Applied Physics Letters 100 (2012) 031111
http://dx.doi.org/10.1063/1.3678031

Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure
Sakr S, Kotsar Y, Tchernycheva M, Warde E, Isac N, Monroy E, Julien FH
Applied Physics Express 5 (2012) 052203
http://dx.doi.org/10.1143/APEX.5.052203

High quality factor AlN nanocavities embedded in a photonic crystal waveguide
Sam-Giao D, Neel D, Sergent S, Gayral B, Rashid MJ, Semond F, Duboz JY, Mexis M, Guillet T, Brimont C, David S, Checoury X, Boucaud P
Applied Physics Letters 100 (2012) 191104
http://dx.doi.org/10.1063/1.4712590

Optical properties of ultrathin InAs quantum-well-heterostructures
Samti R, Raouafi F, Chaouach M, Maaref M, Sakri A, Even J, Gerard JM, Jancu JM
Applied Physics Letters 101 (2012) 012105
http://dx.doi.org/10.1063/1.4731783

Growth mechanism and properties of InGaN insertions in GaN nanowires
Tourbot G, Bougerol C, Glas F, Zagonel LF, Mahfoud Z, Meuret S, Gilet P, Kociak M, Gayral B, Daudin B
Nanotechnology 23 (2012) 135703
http://dx.doi.org/10.1088/0957-4484/23/13/135703

From strong to weak coupling regime in a single GaN microwire up to room temperature
Trichet A, Medard F, Zuniga-Perez J, Alloing B, Richard M
New Journal of Physics 14 (2012) 073004
http://dx.doi.org/10.1088/1367-2630/14/7/073004

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer
Valdueza-Felip S, Ibanez J, Monroy E, Gonzalez-Herraez M, Artus L, Naranjo FB
Thin Solid Films 520 (2012) 2805-2809
http://dx.doi.org/10.1016/j.tsf.2011.12.034

Nonlinear Absorption at Optical Telecommunication Wavelengths of InN Films Deposited by RF Sputtering
Valdueza-Felip S, Monteagudo-Lerma L, Mangeney J, Gonzalez-Herraez M, Julien FH, Naranjo FB
IEEE Photonics Technology Letters 24 (2012) 1998-2000
http://dx.doi.org/10.1109/LPT.2012.2217484

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
Valdueza-Felip S, Rigutti L, Naranjo FB, Lacroix B, Fernandez S, Ruterana P, Julien FH, Gonzalez-Herraez M, Monroy E
Physica Status Solidi a-Applications and Materials Science 209 (2012) 17-20
http://dx.doi.org/10.1002/pssa.201100188

Carrier localization in InN/InGaN multiple-quantum wells with high In-content
Valdueza-Felip S, Rigutti L, Naranjo FB, Ruterana P, Mangeney J, Julien FH, Gonzalez-Herraez M, Monroy E
Applied Physics Letters 101 (2012) 062109
http://dx.doi.org/10.1063/1.4742157

Optimal irreversible stimulated emission
Valente D, Li Y, Poizat JP, Gerard JM, Kwek LC, Santos MF, Auffeves A
New Journal of Physics 14 (2012) 083029
http://dx.doi.org/10.1088/1367-2630/14/8/083029

Universal optimal broadband photon cloning and entanglement creation in one-dimensional atoms
Valente D, Li Y, Poizat JP, Gerard JM, Kwek LC, Santos MF, Auffeves A
Physical Review A 86 (2012) 022333
http://dx.doi.org/10.1103/PhysRevA.86.022333

Monitoring stimulated emission at the single-photon level in one-dimensional atoms
Valente D, Portolan S, Nogues G, Poizat JP, Richard M, Gerard JM, Santos MF, Auffeves A
Physical Review A 85 (2012) 023811
http://dx.doi.org/10.1103/PhysRevA.85.023811

Anticrossing of axial and planar surface-related phonon modes in Raman spectra of self-assembled GaN nanowires
Wang J, Demangeot F, Pechou R, Ponchet A, Cros A, Daudin B
Physical Review B 85 (2012) 155432
http://dx.doi.org/10.1103/PhysRevB.85.155432

Competition between electronic Kerr and free-carrier effects in an ultimate-fast optically switched semiconductor microcavity
Yuce E, Ctistis G, Claudon J, Dupuy E, Boller KJ, Gerard JM, Vos WL
Journal of the Optical Society of America B-Optical Physics 29 (2012) 2630-2642
http://dx.doi.org/10.1364/JOSAB.29.002630

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires
Zagonel LF, Rigutti L, Tchernycheva M, Jacopin G, Songmuang R, Kociak M
Nanotechnology 23 (2012) 455205
http://dx.doi.org/10.1088/0957-4484/23/45/455205