Vous êtes ici : Accueil > Équipe LATEQS > Publications de l'équipe en 2013

Publications de l'équipe en 2013

Publié le 12 décembre 2018

Nature of Tunable Hole g Factors in Quantum Dots
Ares N, Golovach VN, Katsaros G, Stoffel M, Fournel F, Glazman LI, Schmidt OG and De Franceschi S
Physical Review Letters 110 (2013) 046602
http://dx.doi.org/10.1103/PhysRevLett.110.046602

SiGe quantum dots for fast hole spin Rabi oscillations
Ares N, Katsaros G, Golovach VN, Zhang JJ, Prager A, Glazman LI, Schmidt OG and De Franceschi S
Applied Physics Letters 103 (2013) 263113
http://dx.doi.org/10.1063/1.4858959

Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
Coumou PCJJ, Driessen EFC, Bueno J, Chapelier C and Klapwijk TM
Physical Review B 88 (2013) 180505
http://dx.doi.org/10.1103/PhysRevB.88.180505

Single-photon detectors: Fast and efficient
Driessen EFC
Nature Photonics 7 (2013) 168-169
http://dx.doi.org/10.1038/nphoton.2013.37

Coherent Coupling of Two Dopants in a Silicon Nanowire Probed by Landau-Zener-Stuckelberg Interferometry
Dupont-Ferrier E, Roche B, Voisin B, Jehl X, Wacquez R, Vinet M, Sanquer M and De Franceschi S
Physical Review Letters 110 (2013) 136802
http://dx.doi.org/10.1103/PhysRevLett.110.136802

Superconducting properties of laser annealed implanted Si:B epilayers
Grockowiak A, Klein T, Bustarret E, Kacmarcik J, Dubois C, Prudon G, Hoummada K, Mangelinck D, Kociniewski T, Debarre D, et al.
Superconductor Science and Technology 26 (2013) 045009
http://dx.doi.org/10.1088/0953-2048/26/4/045009

Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers
Grockowiak A, Klein T, Cercellier H, Levy-Bertrand F, Blase X, Kacmarcik J, Kociniewski T, Chiodi F, Debarre D, Prudon G, et al.
Physical Review B 88 (2013) 064508
http://dx.doi.org/10.1103/PhysRevB.88.064508

Hybrid Metal-Semiconductor Electron Pump for Quantum Metrology
Jehl X, Voisin B, Charron T, Clapera P, Ray S, Roche B, Sanquer M, Djordjevic S, Devoille L, Wacquez R, et al.
Physical Review X 3 (2013) 021012
http://dx.doi.org/10.1103/PhysRevX.3.021012

PtSi Clustering in Silicon Probed by Transport Spectroscopy
Mongillo M, Spathis P, Katsaros G, De Franceschi S, Gentile P, Rurali R and Cartoixa X
Physical Review X 3 (2013) 041025
http://dx.doi.org/10.1103/PhysRevX.3.041025

Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition
Nemes-Incze P, Vancsó P, Osváth Z, Márk GI, Jin X, Kim Y-S, Hwang C, Lambin P, Chapelier C and Biró LP
Carbon 64 (2013) 178-186
http://dx.doi.org/10.1016/j.carbon.2013.07.050

Electric field-controlled rippling of graphene
Osvath Z, Lefloch F, Bouchiat V and Chapelier C
Nanoscale 5 (2013) 10996-11002
http://dx.doi.org/10.1039/c3nr02934d

Metallic behaviour in SOI quantum wells with strong intervalley scattering
Renard VT, Duchemin I, Niida Y, Fujiwara A, Hirayama Y and Takashina K
Scientific Reports 3 (2013) 2011
http://dx.doi.org/10.1038/srep02011

A two-atom electron pump
Roche B, Riwar RP, Voisin B, Dupont-Ferrier E, Wacquez R, Vinet M, Sanquer M, Splettstoesser J and Jehl X
Nature Communications 4 (2013) 1581
http://dx.doi.org/10.1038/ncomms2544

Spin and valley polarization dependence of resistivity in two dimensions
Takashina K, Niida Y, Renard VT, Piot BA, Tregurtha DSD, Fujiwara A and Hirayama Y
Physical Review B 88 (2013) 201301
http://dx.doi.org/10.1103/PhysRevB.88.201301

Induced Superconductivity in Graphene Grown on Rhenium
Tonnoir C, Kimouche A, Coraux J, Magaud L, Delsol B, Gilles B and Chapelier C
Physical Review Letters 111 (2013) 246805
http://dx.doi.org/10.1103/PhysRevLett.111.246805

Nongalvanic primary thermometry of a two-dimensional electron gas
Torresani P, Martinez-Perez MJ, Gasparinetti S, Renard J, Biasiol G, Sorba L, Giazotto F and De Franceschi S
Physical Review B 88 (2013) 245304
http://dx.doi.org/10.1103/PhysRevB.88.245304