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Proceedings de l'équipe depuis 2006

Publié le 12 décembre 2018
2017

SOI CMOS technology for quantum information processing: A path towards quantum bits and control electronics co-integration
Hutin L, Bertrand B, Maurand R, Urdampilleta M, Jadot B, Bohuslavskyi H, Bourdet L, Niquet YM, Jehl X, Barraud S, et al.
Proceedings of the IEEE International Conference on IC Design and Technology ICICDT 2017 (2017) 7993523
http://dx.doi.org/10.1109/ICICDT.2017.7993523

Divalent, trivalent, and heavy fermion states in Eu compounds
Onuki Y, Nakamura A, Honda F, Aoki D, Tekeuchi T, Nakashima M, Amako Y, Harima H, Matsubayashi K, Uwatoko Y, et al.
Philosophical Magazine 97 (2017) 3399-3414
http://dx.doi.org/10.1080/14786435.2016.1218081

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector
Urdampilleta M, Hutin L, Jadot B, Bertrand B, Bohuslavskyi H, Maurand R, Barraud S, Bauerle C, Sanquer M, Jehl X, et al.
Digest of Technical Papers from the 37th Symposium on VLSI Technology (2017) T172-T173
http://dx.doi.org/10.23919/VLSIT.2017.7998163

2016

Cryogenic operation of SOI electron pumps and ring oscillators
Clapera P, Jehl X, Hutin L, Barraud S, Valentian A, De Franceschi S, Sanquer M and Vinet M
Proceedings of the 21st Silicon Nanoelectronics Workshop SNW (2016) 182-183
http://dx.doi.org/10.1109/snw.2016.7578042

SOI technology for quantum information processing
De Franceschi S, Hutin L, Maurand R, Bourdet L, Bohuslavskyi H, Corna A, Kotekar-Patil D, Barraud S, Jehl X, Niquet Y-M, et al.
Proceedings of the 62nd IEEE International Electron Devices Meeting IEDM (2016) 13.4.1-13.4.4
http:/dx.doi.org/10.1109/IEDM.2016.7838409

SOI platform for spin qubits
De Franceschi S, Maurand R, Corna A, Kotekar-Patil D, Jehl X, Sanquer M, Lavieville R, Hutin L, Barraud S, Vinet M, et al.
Proceedings of the 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS (2016) 124-126
http://dx.doi.org/10.1109/ULIS.2016.7440068

Si CMOS Platform for Quantum Information Processing
Hutin L, Maurand R, Kotekar-Patil D, Corna A, Bohuslavskyi H, Jehl X, Barraud S, De Franceschi S, Sanquer M and Vinet M
Digest of Technical Papers - 36th IEEE Symposium on VLSI Technology 2016-September (2016) 7573380
https://doi.org/10.1109/VLSIT.2016.7573380

2015

Future Challenges and Opportunities for Heterogeneous Process Technology. Towards the Thin Films, Zero Intrinsic Variability Devices, Zero Power Era
Deleonibus S, Faynot O, Ernst T, Vinet M, Batude P, Andrieu F, Weber O, Cooper D, Bertin F, Moriceau H, et al.
Technical Digest of the International Electron Devices Meeting (2015) 9.2.1-9.2.4
http://dx.doi.org/10.1109/iedm.2014.7047015

Simultaneous two gate reflectometric spectroscopy of Si coupled donor-dot system
Jehl X, Orlov AO, Maurand R, Fay P, Snider GL, Barraud S and Sanquer M
Proceedings of the Silicon Nanoelectronics Workshop SNW 2015 (2015) 7275301
http://ieeexplore.ieee.org/document/7275301/

350K Operating Silicon Nanowire Single Electron/Hole Transistors Scaled Down to 3.4nm Diameter and 10nm Gate Length
Lavieville R, Barraud S, Corna A, Jehl X, Sanquer M and Vinet M
Proceedings of EUROSOI-ULIS 2015 (2015) 9-12
http://dx.doi.org/10.1109/ulis.2015.7063760

Study of charged island formation in nanoscale Si single-electron transistors using dual port reflectometric spectroscopy
Orlov AO, Fay P, Snider GL, Jehl X, Lavieville R, Barraud S and Sanquer M
Proceedings of the Silicon Nanoelectronics Workshop SNW 2015 (2015) 7275327
http://ieeexplore.ieee.org/document/7275327/

2014

Challenges in suspending CVD graphene: More than capillary effects
Aydin OI, Hallam T, Thomassin JL, Mouis M and Duesberg G
Proceedings of the 15th International Conference on Ultimate Integration on Silicon (ULIS) (2014) 33-36
http://dx.doi.org/10.1109/ulis.2014.6813899

Low temperature characterization of CVD graphene devices fabricated with a scalable process route
Aydin OI, Mouis M, Cresti A, Piot BA, Hallam T, Thomassin JL and Duesberg GS
Proceedings of the 11th International Workshop on Low Temperature Electronics (2014) 89-92
http://dx.doi.org/10.1109/wolte.2014.6881033

Characterization of hybrid metal/semiconductor electron pumps for quantum metrology
Charron T, Devoille L, Djordjevic S, Seron O, Piquemal F, Clapera P, Ray SJ, Jehl X, Wacquez R and Vinet M
CPEM Digest (Conference on Precision Electromagnetic Measurements) (2014) 442-443
http://dx.doi.org/10.1109/cpem.2014.6898449

A quantum device driven by an on-chip CMOS ring oscillator
Clapera P, Ray S, Jehl X, Sanquer M, Valentian A and Barraud S
Proceedings of the 11th International Workshop on Low Temperature Electronics (2014) 73-76
http://dx.doi.org/10.1109/wolte.2014.6881029

DC Josephson transport by quartets and other Andreev resonances in superconducting bijunctions
Melin R, Feinberg D, Courtois H, Padurariu C, Pfeffer A, Duvauchelle JE, Lefloch F, Jonckheere T, Rech J, Martin T, et al.
Journal of Physics: Conference Series 568 (2014) 052006
http://dx.doi.org/10.1088/1742-6596/568/5/052006

Detection of the first charged states in ultrasmall Si single-hole transistor using dual-channel radio frequency reflectometry
Orlov A, Fay P, Snider G, Jehl X, Barraud S and Sanquer M
Procedings of the 72nd Device Research Conference (2014) 83-84
http://dx.doi.org/10.1109/drc.2014.6872308

Dual channel radio frequency reflectometry technique for charge identification in single electron transistors
Orlov AO, Fay P, Snider GL, Barraud S, Jehl X and Sanquer M
Proceedings of the 14th International Conference on Nanotechnology (2014) 138-140
http://dx.doi.org/10.1109/nano.2014.6968046

Back-gating effects on radio-frequency reflectometry-based characteriztaion of nanoscale Si single-electron transistors
Orlov AO, Fay P, Snider GL, Jehl X, Barraud S and Sanquer M
Silicon Nanoelectronics Workshop SNW 2014, (2014) 7348590
http://dx.doi.org/10.1109/snw.2014.7348590

Modeling of an adiabatic tunable-barrier electron pump
Ray SJ, Clapera P, Jehl X, Charron T, Djordjevic S, Devoille L, Potanina E, Barinovs G and Kashcheyevs V
CPEM Digest (Conference on Precision Electromagnetic Measurements) (2014) 446-447
http://dx.doi.org/10.1109/cpem.2014.6898451

Introducing Joint Research Project «quantum Ampere» for the realisation of the new SI ampere
Scherer H, Giblin SP, Jehl X, Manninen A, Piquemal F and Ritchie DA
EPJ Web of Conferences 77 (2014) 00004
http://dx.doi.org/10.1051/epjconf/20147700004

Introducing Joint Research Project "Quantum Ampere" for the realisation of the new SI ampere
Scherer H, Giblin SP, Jehl X, Manninen A, Piquemal F and Ritchie DA
EPJ Web of Conferences 77 (2014) 00004
http://dx.doi.org/10.1051/epjconf/20147700004

FDSOI to nanowires and single electron transistors
Vinet M, Barraud S, Jehl X, Lavieville R, Deshpande V, Wacquez R, Sanquer M, Coquand R, Cueto O, Roche B, et al.
Proceedings of the Silicon Nanoelectronics Workshop SNW 2014 (2014) 7348548
http://dx.doi.org/10.1109/snw.2014.7348548

Edge-states at the onset of a silicon trigate nanowire FET
Voisin B, Nguyen VH, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet YM, De Franceschi S, et al.
Proceedings of the Silicon Nanoelectronics Workshop SNW 2014 (2014) 7348586
http://dx.doi.org/10.1109/snw.2014.7348586

2013

The Future of Heterogeneous and Diversified ULSI Nanoelectronics
Deleonibus S, Templier F, Andrieu F, Batude P, Jehl X, Martin F, Milesi F, Morvan S, Nemouchi F, Sanquer M, et al.
ECS Transactions 54 (2013) 3-14
http://dx.doi.org/10.1149/05401.0003ecst

Scaling of Trigate nanowire (NW) MOSFETs to sub-7 nm width: to Single Electron Transistor
Deshpande V, Barraud S, Jehl X, Wacquez R, Vinet M, Coquand R, Roche B, Voisin B, Triozon F, Vizioz C, et al.
Solid-State Electronics 84 (2013) 179-184
http://dx.doi.org/10.1016/j.sse.2013.02.015

Single Electron and Single Atom CMOS Perspectives
Jehl X, Sanquer M, Vinet M and Wacquez R
ECS Transactions 58 (2013) 63-72
http://dx.doi.org/10.1149/05809.0063ecst

The Coupled Atom Transistor: a first realization with shallow donors implanted in a FDSOI silicon nanowire
Voisin B, Roche B, Dupont-Ferrier E, Sklenard B, Cobian M, Jehl X, Cueto O, Wacquez R, Vinet M, Niquet YM, et al.
Proceedings of the 23rd European Solid-State Device Research Conference ESSDERC (2013) 147-150
http://dx.doi.org/10.1109/essderc.2013.6818840

2012

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities
Deshpande V, Barraud S, Jehl X, Wacquez R, Vinet M, Coquand R, Roche B, Voisin B, Triozon F, Vizioz C, Tosti L, Previtali B, Perreau P, Poiroux T, Sanquer M, Faynot O
Proceedings of the European Solid-State Device Research Conference ESSDERC 2012 (2012) 121-124
http://dx.doi.org/10.1109/ESSDERC.2012.6343348

300 K operating full-CMOS integrated Single Electron Transistor (SET)-FET circuits
Deshpande V, Wacquez R, Vinet M, Jehl X, Barraud S, Coquand R, Roche B, Voisin B, Vizioz C, Previtali B, Tosti L, Perreau P, Poiroux T, Sanquer M, De Salvo B, Faynot O
Technical Digest - International Electron Devices Meeting IEDM (2012) 8.7.1-8.7.4
http://dx.doi.org/10.1109/iedm.2012.6479007

Transport measurement across single and coupled dopants implanted in a CMOS channel
Dupont-Ferrier E, Roche B, Voisin B, Pierre M, Jehl X, Sanquer M, De Franceschi S, Wacquez R, Vinet M
Proceedings of the IEEE International Semiconductor Conference Dresden-Grenoble ISCDG 2012 (2012) 57-59
http://dx.doi.org/10.1109/ISCDG.2012.6359992

Multi-charge pumping at 1GHz with a hybrid metal/semiconductor device
Jehl X, Roche B, Sanquer M, Wacquez R, Vinet M, Charron T, Djordjevic S, Devoille L
Proceedings of the 2012 Conference on Precision Electromagnetic Measurements (2012) 250-251
http://dx.doi.org/10.1109/CPEM.2012.6250896

Charge granularity in single electron transistors with polysilicon gates
Kotekar-Patil D, Jauerneck S, Ruoff M, Wharam D, Kern D, Jehl X, Wacquez R, Sanquer M
Proceedings of the 13th International Conference on Ultimate Integration on Silicon ULIS 2012 (2012) 89-92
http://dx.doi.org/10.1109/ULIS.2012.6193364

Realization of both a single electron transistor and a field effect transistor with an underlapped FDSOI MOSFET geometry
Roche B, Voisin B, Jehl X, Sanquer M, Wacquez R, Vinet M, Deshpande V, Previtali B
Proceedings of the 13th International Conference on Ultimate Integration on Silicon ULIS 2012 (2012) 129-131
http://dx.doi.org/10.1109/ULIS.2012.6193374

Strain microgauge implementation on cylindrical metal substrates
Yang W, Bonvilain A, Gustavo F, Basrour S
Microelectronic Engineering 97 (2012) 285-288
http://dx.doi.org/10.1016/j.mee.2012.05.044

2011

Influence of annealing temperature on the performance of graphene / SiC transistors with high-k / metal gate
Clavel M, Poiroux T, Mouis M, Becerra L, Thomassin JL, Zenasni A, Lapertot G, Rouchon D, Lafond D, Faynot O
Proceedings of the 12th International Conference on Ultimate Integration on Silicon (2011) 171-174
http://dx.doi.org/10.1109/ULIS.2011.5757955

Novel analysis of impact of single dopants on sub-15nm channel length FDSOI NMOSFETs utilizing cryogenic measurements
Deshpande V, Wacquez R, Vinet M, Jehl X, Roche B, Voisin B, Sanquer M, Mazurier J, Weber O, Tosti L, Brévard L, Perreau P, Andrieu F, Poiroux T, Faynot O
Proceedings of the 2011 IEEE International SOI Conference (2011)
http://dx.doi.org/10.1109/SOI.2011.6081795

Observing collissions of simulated asteroids in microgravity
Grockowiak A, De Guiran R, Dugué M, Palin L, Giraud J, Vandeportal J, Podgorski T, Augereau JC
Proceedings of the 62nd International Astronautical Congress 2011 - IAC 2011 11 (2011) 9090-9096
http://www.iafastro.net/iac/archive/browse/IAC-11/E2/3/11097/

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability?
Jehl X, Roche B, Sanquer M, Voisin B, Wacquez R, Deshpande V, Previtali B, Vinet M, Verduijn J, Tettamanzi GC, Rogge S, Kotekar-Patil D, Ruoff M, Kern D, Wharam DA, Belli M, Prati E, Fanciulli M
Procedia Computer Science 7 (2011) 266-268
http://dx.doi.org/10.1016/j.procs.2011.09.016

2010

Isotopic substitution of boron and carbon in superconducting diamond epilayers grown by MPCVD
Achatz P, Omnes F, Ortega L, Marcenat C, Vacik J, Hnatowicz V, Koster U, Jomard F, Bustarret E
Diamond and Related Materials 19 (2010) 814-817
http://dx.doi.org/10.1016/j.diamond.2010.01.052

Progress on single-electron transistors
Jehl X, Sanquer M
Proceedings of ICICDT2010 (2010) 194-197
http://dx.doi.org/10.1109/ICICDT.2010.5510261

Reversible Magnetization of Melt-Processed NEG-123 Superconductor
Jirsa M, Rames M, Muralidhar M, Kacmarcik J, Marcenat C
Acta Physica Polonica A 118 (2010) 1022-1023
http://przyrbwn.icm.edu.pl/APP/ABSTR/118/a118-5-126.html

Single Ion Implantation into Si-Based Devices
Johnson BC, Tettamanzi G, Yang C, Alves A, Van Donkelaar J, Thompson S, Verduijn A, Mol JA, Wacquez R, Vinet M, Dzurak A, Sanquer M, Rogge S, Jamieson D
ECS Transactions 33 (2010) 179-189
http://dx.doi.org/10.1149/1.3485692

Studies on two-gap superconductivity in 2H-NbS2
Kacmarcik J, Pribulova Z, Marcenat C, Klein T, Rodiere P, Cario L, Samuely P
Physica C-Superconductivity and Its Applications 470 (2010) S719-S720
http://dx.doi.org/10.1016/j.physc.2009.10.131

The Superconducting Transition in Boron Doped Silicon Films
Kociniewski T, Debarre D, Grockowiak A, Kacmarcik J, Marcenat C, Bustarret E, Ortega L, Klein T, Prudon G, Dubois C, Gautier B, Dupuy JC
Acta Physica Polonica A 118 (2010) 1026-1027
http://przyrbwn.icm.edu.pl/APP/ABSTR/118/a118-5-128.html

Characterization of a single resonant charge in a silicon nanowire device
Pierre M, Jehl X, Sanquer M, Vinet M, Molas G, Deleonibus S
Proceedings of the Ieee Silicon Nanoelectronics Workshop (2010) 39-40
http://dx.doi.org/10.1109/SNW.2008.5418458

Dielectric confinement and fluctuations of the local density of state in the source and drain of an ultra scaled SOI NMOS transistor
Pierre M, Roche B, Jehl X, Sanquer M, Wacquez R, Vinet M, Cueto O, Previtali B, Deshpande V
Proceedings of the 15th Silicon Nanoelectronics Workshop (2010) 5562598
http://dx.doi.org/10.1109/SNW.2010.5562598

Operation of a silicon cmos electron pump
Pierre M, Roche B, Jehl X, Wacquez R, Sanquer M, Vinet M, Feltin N, Devoille L
Proceedings of CPEM2010 (2010) 755-756
http://dx.doi.org/10.1109/CPEM.2010.5543479

Two-Gap Superconductivity in 2H-NbS2
Pribulova Z, Leroux M, Kacmarcik J, Marcenat C, Klein T, Rodiere P, Cario L, Samuely P
Acta Physica Polonica A 118 (2010) 1024-1025
http://przyrbwn.icm.edu.pl/APP/ABSTR/118/a118-5-127.html

Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm
Wacquez R, Vinet M, Pierre M, Roche B, Jehl X, Cueto O, Verduijn J, Tettamanzi GC, Rogge S, Deshpande V, Previtali B, Vizioz C, Pauliac-Vaujour S, Comboroure C, Bove N, Faynot O, Sanquer M
Digest of Technical Papers - Symposium on VLSI Technology (2010) 193-194
Http://dx.doi.org/10.1109/VLSIT.2010.5556224

2009

Metal-insulator transition and superconductivity in highly boron-doped nanocrystalline diamond films
Achatz P, Bustarret E, Marcenat C, Piquerel R, Dubouchet T, Chapelier C, Bonnot AM, Williams OA, Haenen K, Gajewski W, Garrido JA, Stutzmann M
Physica Status Solidi a-Applications and Materials Science 206 (2009) 1978-1985
http://dx.doi.org/10.1002/pssa.200982233

Specific heat of superconducting MgCNi3 single crystals
Kacmarc?k J, Pribulova Z, Marcenat C, Samuely P, Klein T, Demuer A, Lee SI
Journal of Physics: Conference Series 150 (2009) 052087
http://dx.doi.org/10.1088/1742-6596/150/5/052087

Sample variability and time stability in scaled silicon nanowires
Pierre M, Jehl X, Wacquez R, Vinet M, Sanquer M, Belli M, Prati E, Fanciulli M, Verduijn J, Tettamanzi GC, Lansbergen GP, Rogge S, Ruoff M, Fleischer M, Wharam D, Kern D
Proceedings of the 10th International Conference on Ultimate Integration of Silicon Ulis 2009, (2009) 249-252
http://dx.doi.org/10.1109/ULIS.2009.4897583

2008

Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon
Cammilleri D, Fossard F, Debarre D, Manh CT, Dubois C, Bustarret E, Marcenat C, Achatz P, Bouchier D, Boulmer J
Thin Solid Films 517 (2008) 75-79
http://dx.doi.org/10.1016/j.tsf.2008.08.073

AC micro calorimetry of superconducting MgCNi3 single crystals
Kacmarcik J, Pribulova Z, Samuely P, Marcenat C, Klein T, Jang DJ, Lee HG, Lee HS, Lee SI
Acta Physica Polonica A 113 (2008) 363-366
http://przyrbwn.icm.edu.pl/APP/ABSTR/113/a113-1-89.html

Superconducting energy gap in MgCNi3 single crystals
Kacmarcik J, Pribulova Z, Szabo P, Samuely P, Marcenat C, Klein T, Jang DJ, Lee HG, Lee HS, Lee SI
Journal of Physics and Chemistry of Solids 69 (2008) 3011-3013
http://dx.doi.org/10.1016/j.jpcs.2008.06.009

Low noise silicon CMOS single-electron transistors and electron pumps
Pierre M, Jehl X, Sanquer M, Vinet M, Previtali B, Molas G, Deleonibus S
CPEM Digest 4574763 (2008) 282-283
http://dx.doi.org/10.1109/CPEM.2008.4574763

Doping-induced anisotropic lattice strain in homoepitaxial heavily boron-doped diamond
Wojewoda T, Achatz P, Ortega L, Omnes F, Marcenat C, Bourgeois E, Blase X, Jomard F, Bustarret E
Diamond and Related Materials 17 (2008) 1302-1306
http://dx.doi.org/10.1016/j.diamond.2008.01.040

2007

Influence of Al doping on the gap values in MgB2 single crystals
Klein T, Holanova Z, Marcenat C, Lyard L, Marcus J, Szabo P, Samuely P, Lee SI
Physica C-Superconductivity and Its Applications 460-462 (2007) 562-563
http://dx.doi.org/10.1016/j.physc.2007.04.102

Interplay between different states in heavy-fermion physics
Knebel G, Izawa K, Bourdarot F, Hassinger E, Salce B, Aoki D, Flouquet J
Journal of Magnetism and Magnetic Materials 310 (2007) 195-200
http://dx.doi.org/10.1016/j.jmmm.2006.10.007

Hysteresis in the de Haas-van Alphen effect
Kramer RBG, Egorov VS, Jansen AGM, Joss W
Journal of Magnetism and Magnetic Materials 310 (2007) 1675-1677
http://dx.doi.org/10.1016/j.jmmm.2006.10.865

Pressure dependence of the double superconducting transition of the filled skutterudite PrOs4Sb12
Measson MA, Braithwaite D, Salce B, Flouquet J, Lapertot G, Sugawara H, Sato H, Onuki Y
Journal of Magnetism and Magnetic Materials 310 (2007) 626-628
http://dx.doi.org/10.1016/j.jmmm.2006.10.518

Pressure effect of electrical resistivity and AC specific heat in CePtAl
Nakashima M, Ueda T, Shimizu K, Nakashima H, Thamizhavel A, Tateiwa N, Haga Y, Hedo M, Uwatoko Y, Settai R, Onuki Y, Izawa K, Knebel G, Salce B, Flouquet J
Journal of Magnetism and Magnetic Materials 310 (2007) E9-E11
http://dx.doi.org/10.1016/j.jmmm.2006.10.056

Aluminum and carbon substitution in MgB2. Electron doping and scattering effects
Samuely P, Szabo P, Pribulova Z, Angst M, Bud'ko SL, Canfield PC, Klein T, Lyard L, Marcus J, Marcenat C, Kang BW, Kim HJ, Lee HS, Lee HK, Lee SI
Physica C-Superconductivity and Its Applications 460-462 (2007) 84-88
http://dx.doi.org/10.1016/j.physc.2007.03.161

2006

Scanning tunneling spectroscopy on a disordered superconductor
Chapelier C, Escoffier W, Sacepe B, Villegier JC, Sanquer A
AIP Conference Proceedings 850 (2006) 975-976
http://dx.doi.org/10.1063/1.2355031

Valence and magnetic ordering in the mixed valent compound TmSe
Derr J, Flouquet J, Salce B, Knebel G
Physica B-Condensed Matter 378-380 (2006) 616-617
http://dx.doi.org/10.1016/j.physb.2006.01.341

Peak spacing statistics in silicon single-electron transistors: Size and gate oxide thickness dependence
Jehl X, Hofheinz M, Boehm M, Sanquer M, Molas G, Vinet M, Deleonibus S
Physica E: Low-Dimensional Systems and Nanostructures 34 (2006) 620-623
http://dx.doi.org/10.1016/j.physe.2006.03.043

Condon domain visualization by micro Hall probes
Kramer RBG, Egorov VS, Gasparov VA, Jansen AGM, Joss W
AIP Conference Porceedings 850 (2006) 1269-1270
http://dx.doi.org/10.1063/1.2355168

High field measurements of the Condon domain phase diagram in silver
Kramer RBG, Egorov VS, Gasparov VA, Jansen AGM, Joss W
Journal of Physics: Conference Series 51 (2006) 299-302
http://dx.doi.org/10.1088/1742-6596/51/1/069

Hysteresis in the de Haas-van Alphen effect in the Condon domain phase
Kramer RBG, Egorov VS, Jansen AGM, Joss W
AIP Conference Porceedings 850 (2006) 1271-1272
http://dx.doi.org/10.1063/1.2355169